| Issue |
Section |
Title |
File |
| Vol 50, No 1 (2016) |
XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 |
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
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| Vol 50, No 1 (2016) |
Review |
Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings |
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| Vol 50, No 1 (2016) |
Review |
Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source |
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| Vol 50, No 1 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
On a combined approach to studying the correlation parameters of self-organizing structures |
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| Vol 50, No 1 (2016) |
Electronic Properties of Semiconductors |
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range |
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| Vol 50, No 1 (2016) |
Electronic Properties of Semiconductors |
On the specific electrophysical properties of n-InSe single crystals |
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| Vol 50, No 1 (2016) |
Electronic Properties of Semiconductors |
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2 (x = 0.1–0.25) alloys |
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| Vol 50, No 1 (2016) |
Spectroscopy, Interaction with Radiation |
Structure and optical properties of ZnO with silver nanoparticles |
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| Vol 50, No 1 (2016) |
Surfaces, Interfaces, and Thin Films |
Optical properties of PbS thin films |
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| Vol 50, No 1 (2016) |
Surfaces, Interfaces, and Thin Films |
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing |
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| Vol 50, No 1 (2016) |
Surfaces, Interfaces, and Thin Films |
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films |
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| Vol 50, No 1 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Vertical heterostructures based on graphene and other 2D materials |
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| Vol 50, No 1 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry |
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| Vol 50, No 1 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On controlling the electronic states of shallow donors using a finite-size metal gate |
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| Vol 50, No 1 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Polarized photoluminescence of nc-Si–SiOx nanostructures |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Photodetectors based on CuInS2 |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor Devices |
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters |
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| Vol 50, No 1 (2016) |
Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures |
Formation of graphite/sic structures by the thermal decomposition of silicon carbide |
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| Vol 50, No 1 (2016) |
Erratum |
Erratum to: “Vacancies in epitaxial graphene” |
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| Vol 50, No 2 (2016) |
Electronic Properties of Semiconductors |
On the theory of the two-photon linear photovoltaic effect in n-GaP |
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| Vol 50, No 2 (2016) |
Electronic Properties of Semiconductors |
Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys |
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| Vol 50, No 2 (2016) |
Spectroscopy, Interaction with Radiation |
Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors |
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| Vol 50, No 2 (2016) |
Surfaces, Interfaces, and Thin Films |
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field |
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| Vol 50, No 2 (2016) |
Surfaces, Interfaces, and Thin Films |
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy |
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| Vol 50, No 2 (2016) |
Surfaces, Interfaces, and Thin Films |
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface |
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| Vol 50, No 2 (2016) |
Surfaces, Interfaces, and Thin Films |
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin |
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| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates |
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| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
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| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
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| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
GaAs structures with a gate dielectric based on aluminum-oxide layers |
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| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
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| Vol 50, No 2 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Composition and optical properties of amorphous a-SiOx:H films with silicon nanoclusters |
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| Vol 50, No 2 (2016) |
Carbon Systems |
Effect of transverse electric field on the longitudinal current–voltage characteristic of graphene superlattice |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Laser-assisted simulation of transient radiation effects in heterostructure components based on AIIIBV semiconductor compounds |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Field-effect transistor with 2D carrier systems in the gate and channel |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Si:Si LEDs with room-temperature dislocation-related luminescence |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Electroluminescence properties of LEDs based on electron-irradiated p-Si |
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| Vol 50, No 2 (2016) |
Physics of Semiconductor Devices |
Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon |
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| Vol 50, No 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements |
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| Vol 50, No 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al2O3 matrices |
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| Vol 50, No 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
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| Vol 50, No 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries |
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| Vol 50, No 3 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Ab Initio Calculations of Phonon Dispersion in ZnGa2Se4 |
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| Vol 50, No 3 (2016) |
Electronic Properties of Semiconductors |
On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC |
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| Vol 50, No 3 (2016) |
Electronic Properties of Semiconductors |
Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well |
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| Vol 50, No 3 (2016) |
Electronic Properties of Semiconductors |
A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors |
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| Vol 50, No 3 (2016) |
Surfaces, Interfaces, and Thin Films |
Deep Centers at the Interface in In2xGa2(1–x)Te3/InAs and In2Te3/InAs Heterostructures |
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| Vol 50, No 3 (2016) |
Surfaces, Interfaces, and Thin Films |
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms |
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| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling |
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| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
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| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
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| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy |
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| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
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| Vol 50, No 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation |
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| Vol 50, No 3 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On Controlling the Hydrophobicity of Nanostructured Zinc-Oxide Layers Grown by Pulsed Electrodeposition |
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| Vol 50, No 3 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Photoluminescence and Confinement of Excitons in Disordered Porous Films |
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| Vol 50, No 3 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon |
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| Vol 50, No 3 (2016) |
Carbon Systems |
Model of Adsorption on Amorphous Graphene |
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| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
Model Development for Current–Voltage and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT |
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| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
Microdisk Injection Lasers for the 1.27-μm Spectral Range |
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| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time |
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| Vol 50, No 3 (2016) |
Physics of Semiconductor Devices |
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base |
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| Vol 50, No 3 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers |
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| Vol 50, No 3 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
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| Vol 50, No 3 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion |
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| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
Electronic structure of Pt-substituted clathrate silicides Ba8PtxSi46–x(x = 4–6) |
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| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
Dependence of mobility on the electron concentration upon scattering at polar optical phonons in AIII–N nitrides |
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| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
Theory of the anomalous diffusion of carriers in disordered organic materials under conditions of the CELIV experiment |
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| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation |
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| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region |
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| Vol 50, No 4 (2016) |
Electronic Properties of Semiconductors |
Features of photoinduced magnetism in some yttrium–iron-garnet single crystals |
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| Vol 50, No 4 (2016) |
Spectroscopy, Interaction with Radiation |
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons |
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| Vol 50, No 4 (2016) |
Surfaces, Interfaces, and Thin Films |
Induced surface states of the ultrathin Ba/3C-SiC(111) interface |
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| Vol 50, No 4 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures |
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| Vol 50, No 4 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime |
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| Vol 50, No 4 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire |
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| Vol 50, No 4 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Gaussian approximation of the spectral dependence of the absorption spectrum in polymer semiconductors |
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| Vol 50, No 4 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
“Dimensional” effect due to the matrix isolation of luminescent composites of polyphenylquinolines |
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| Vol 50, No 4 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Polytype inclusions and polytype stability in silicon-carbide crystals |
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| Vol 50, No 4 (2016) |
Carbon Systems |
Prediction of the stability and electronic properties of carbon nanotori synthesized by a high-voltage pulsed discharge in ethanol vapor |
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| Vol 50, No 4 (2016) |
Physics of Semiconductor Devices |
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se2 thin-film solar cells |
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| Vol 50, No 4 (2016) |
Physics of Semiconductor Devices |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
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| Vol 50, No 4 (2016) |
Physics of Semiconductor Devices |
Simulation of the real efficiencies of high-efficiency silicon solar cells |
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| Vol 50, No 4 (2016) |
Physics of Semiconductor Devices |
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma |
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| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy |
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| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Specific features of doping with antimony during the ion-beam crystallization of silicon |
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| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optical and structural properties of Cu2ZnSnS4 thin films obtained by pulsed laser deposition in a H2S atmosphere with subsequent annealing in a N2 atmosphere |
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| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy |
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| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
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| Vol 50, No 5 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications |
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| Vol 50, No 5 (2016) |
Electronic Properties of Semiconductors |
Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals |
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| Vol 50, No 5 (2016) |
Electronic Properties of Semiconductors |
X-ray conductivity of ZnSe single crystals |
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| Vol 50, No 5 (2016) |
Spectroscopy, Interaction with Radiation |
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate |
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| Vol 50, No 5 (2016) |
Surfaces, Interfaces, and Thin Films |
Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase |
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| Vol 50, No 5 (2016) |
Surfaces, Interfaces, and Thin Films |
Atomic steps on an ultraflat Si(111) surface upon sublimation |
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| Vol 50, No 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films |
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| Vol 50, No 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide |
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| Vol 50, No 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range |
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| Vol 50, No 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
A new simulation model for inhomogeneous Au/n-GaN structure |
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| Vol 50, No 5 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Piezoresistive and posistor effects in polymer-semiconductor and polymer-ferropiezoceramic composites |
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| Vol 50, No 5 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Lifetime of excitons localized in Si nanocrystals in amorphous silicon |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure |
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| Vol 50, No 5 (2016) |
Physics of Semiconductor Devices |
Radiation-stimulated processes in transistor temperature sensors |
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| Vol 50, No 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Acanthite–argentite transformation in nanocrystalline silver sulfide and the Ag2S/Ag nanoheterostructure |
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| Vol 50, No 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates |
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| Vol 50, No 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Role of the heat accumulation effect in the multipulse modes of the femtosecond laser microstructuring of silicon |
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| Vol 50, No 5 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Summary of the 12th Russian Conference on Semiconductor Physics (Ershovo, Zvenigorod, Moscow, September 20–25, 2015) |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Matrix-type effect on the magnetotransport properties of Ni–AlO and Ni–NbO composite systems |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Optical properties of In2Se3 thin films |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Anomalous thermoelectric power in Hg3In2Te6 crystals |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga) |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation |
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| Vol 50, No 6 (2016) |
Electronic Properties of Semiconductors |
Radiation-induced bistable centers with deep levels in silicon n+–p structures |
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| Vol 50, No 6 (2016) |
Surfaces, Interfaces, and Thin Films |
On the local injection of emitted electrons into micrograins on the surface of AIII–BV semiconductors |
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| Vol 50, No 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the ohmicity of Schottky contacts |
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| Vol 50, No 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field |
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| Vol 50, No 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium |
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| Vol 50, No 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
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| Vol 50, No 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields |
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| Vol 50, No 6 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen |
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| Vol 50, No 6 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Inter atomic force constants of binary and ternary tetrahedral semiconductors |
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| Vol 50, No 6 (2016) |
Carbon Systems |
Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models |
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| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes |
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| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis |
|
| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass |
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| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |
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| Vol 50, No 6 (2016) |
Physics of Semiconductor Devices |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
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| Vol 50, No 6 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the photon annealing of silicon-implanted gallium-nitride layers |
|
| Vol 50, No 6 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
The modification of BaCe0.5Zr0.3Y0.2O3–δ with copper oxide: Effect on the structural and transport properties |
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| Vol 50, No 6 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Synthesis of metal and semiconductor nanoparticles in a flow of immiscible liquids |
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| Vol 50, No 7 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Solubility of oxygen in CdS single crystals and their physicochemical properties |
|
| Vol 50, No 7 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium |
|
| Vol 50, No 7 (2016) |
Electronic Properties of Semiconductors |
Features of conductivity mechanisms in heavily doped compensated V1–xTixFeSb Semiconductor |
|
| Vol 50, No 7 (2016) |
Electronic Properties of Semiconductors |
Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3 |
|
| Vol 50, No 7 (2016) |
Electronic Properties of Semiconductors |
Electron exchange between tin impurity U– centers in PbSzSe1–z alloys |
|
| Vol 50, No 7 (2016) |
Electronic Properties of Semiconductors |
Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC |
|
| Vol 50, No 7 (2016) |
Spectroscopy, Interaction with Radiation |
Effect of coulomb correlations on luminescence and absorption in compensated semiconductors |
|
| Vol 50, No 7 (2016) |
Surfaces, Interfaces, and Thin Films |
Local emission spectroscopy of surface micrograins in AIIIBV semiconductors |
|
| Vol 50, No 7 (2016) |
Surfaces, Interfaces, and Thin Films |
Indium nanowires at the silicon surface |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of deep levels in GaAs p–i–n structures |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium |
|
| Vol 50, No 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing |
|
| Vol 50, No 7 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode |
|
| Vol 50, No 7 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Nonlinear optical response of planar and spherical CdSe nanocrystals |
|
| Vol 50, No 7 (2016) |
Carbon Systems |
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000\(\bar 1\)) in vacuum |
|
| Vol 50, No 7 (2016) |
Physics of Semiconductor Devices |
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors |
|
| Vol 50, No 7 (2016) |
Physics of Semiconductor Devices |
Electrochemical lithiation of silicon with varied crystallographic orientation |
|
| Vol 50, No 7 (2016) |
Physics of Semiconductor Devices |
On current spreading in solar cells: a two-parameter tube model |
|
| Vol 50, No 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy |
|
| Vol 50, No 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates |
|
| Vol 50, No 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Technique for forming ITO films with a controlled refractive index |
|
| Vol 50, No 8 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si |
|
| Vol 50, No 8 (2016) |
Electronic Properties of Semiconductors |
Temperature dependence of the hall coefficient in the Вi1–xSbx System (x = 0.06, 0.12) |
|
| Vol 50, No 8 (2016) |
Spectroscopy, Interaction with Radiation |
Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films |
|
| Vol 50, No 8 (2016) |
Surfaces, Interfaces, and Thin Films |
Study of the impurity photoconductivity in p-InSb using epitaxial p+ contacts |
|
| Vol 50, No 8 (2016) |
Surfaces, Interfaces, and Thin Films |
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Conduction in titanium dioxide films and metal–TiO2–Si structures |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Room temperature de Haas–van Alphen effect in silicon nanosandwiches |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime |
|
| Vol 50, No 8 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure |
|
| Vol 50, No 8 (2016) |
Carbon Systems |
Carrier velocity effect on carbon nanotube Schottky contact |
|
| Vol 50, No 8 (2016) |
Carbon Systems |
Electromagnetic radiation of electrons in corrugated graphene |
|
| Vol 50, No 8 (2016) |
Carbon Systems |
Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact |
|
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic |
|
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation |
|
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology |
|
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
|
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies |
|
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Changes in the conductivity of lead-selenide thin films after plasma etching |
|
| Vol 50, No 9 (2016) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Halogen diffusion on a Ga-stabilized ζ-GaAs(001)–(4 × 2) surface |
|
| Vol 50, No 9 (2016) |
Electronic Properties of Semiconductors |
Low-temperature conductivity of gadolinium sulfides |
|
| Vol 50, No 9 (2016) |
Electronic Properties of Semiconductors |
Electrical parameters of polycrystalline Sm1–xEuxS rare-earth semiconductors |
|
| Vol 50, No 9 (2016) |
Electronic Properties of Semiconductors |
Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8 |
|
| Vol 50, No 9 (2016) |
Spectroscopy, Interaction with Radiation |
Plasmon–phonon coupling in the infrared reflectance spectra of Bi2Se3 films |
|
| Vol 50, No 9 (2016) |
Surfaces, Interfaces, and Thin Films |
Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-confined structures with high absorbance |
|
| Vol 50, No 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
|
| Vol 50, No 9 (2016) |
Amorphous, Vitreous, and Organic Semiconductors |
Photoluminescence spectra of thin films of ZnTPP–C60 and CuTPP–C60 molecular complexes |
|
| Vol 50, No 9 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Laser sintering of a TiO2 nanoporous film on a flexible substrate for application in solar cells |
|
| Vol 50, No 9 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Dielectric properties of layered FeGaInS4 single crystals in an alternating electric field |
|
| Vol 50, No 9 (2016) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures |
|
| Vol 50, No 9 (2016) |
Physics of Semiconductor Devices |
On methods of determining the band gap of semiconductor structures with p–n junctions |
|
| Vol 50, No 9 (2016) |
Physics of Semiconductor Devices |
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures |
|
| Vol 50, No 9 (2016) |
Physics of Semiconductor Devices |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
|
| Vol 50, No 9 (2016) |
Physics of Semiconductor Devices |
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of the low-resistivity compound Cu3Ge by low-temperature treatment in an atomic hydrogen flux |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells |
|
| Vol 50, No 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
|
| Vol 50, No 10 (2016) |
Electronic Properties of Semiconductors |
Energy spectrum of charge carriers in TlIn1–xYbxTe2 solid solutions |
|
| Vol 50, No 10 (2016) |
Electronic Properties of Semiconductors |
First-principles calculations of the electronic and structural properties of GaSb |
|
| Vol 50, No 10 (2016) |
Electronic Properties of Semiconductors |
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals |
|
| Vol 50, No 10 (2016) |
Electronic Properties of Semiconductors |
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons |
|
| Vol 50, No 10 (2016) |
Electronic Properties of Semiconductors |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
|
| Vol 50, No 10 (2016) |
Spectroscopy, Interaction with Radiation |
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities |
|
| Vol 50, No 10 (2016) |
Spectroscopy, Interaction with Radiation |
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission |
|
| Vol 50, No 10 (2016) |
Spectroscopy, Interaction with Radiation |
Reflectance of a PbSb2Te4 crystal in a wide spectral range |
|
| Vol 50, No 10 (2016) |
Surfaces, Interfaces, and Thin Films |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
|
| Vol 50, No 10 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
|
| Vol 50, No 10 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Germanium laser with a hybrid surface plasmon mode |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On the crystal structure and thermoelectric properties of thin Si1–xMnx films |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Anharmonic Bloch oscillations of electrons in electrically biased superlattices |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On the condensation of exciton polaritons in microcavities induced by a magnetic field |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Dynamic generation of spin-wave currents in hybrid structures |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Magnetospectroscopy of double HgTe/CdHgTe quantum wells |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Study of the structures of cleaved cross sections by Raman spectroscopy |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Investigation of the thermal stability of metastable GeSn epitaxial layers |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Resonant features of the terahertz generation in semiconductor nanowires |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On a new method of heterojunction formation in III–V nanowires |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Strained multilayer structures with pseudomorphic GeSiSn layers |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Polariton condensate coherence in planar microcavities in a magnetic field |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Polarization of the photoluminescence of quantum dots incorporated into quantum wires |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm |
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| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Polarization of the induced THz emission of donors in silicon |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells |
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| Vol 50, No 13 (2016) |
Materials for Electronic Engineering |
Improving the functional characteristics of gallium nitride during vapor phase epitaxy |
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| Vol 50, No 13 (2016) |
Materials for Electronic Engineering |
Interaction of electromagnetic radiation with magnetically functionalized CNT nanocomposite in the subterahertz frequency range |
|
| Vol 50, No 13 (2016) |
Materials for Electronic Engineering |
Methods of accounting for inclusion-shape randomness in calculating the effective dielectric characteristics of heterogeneous textured materials |
|
| Vol 50, No 13 (2016) |
Materials for Electronic Engineering |
Method of investigation of galvanomagnetic properties of CdxHg1 − xTe and CdxHg1 − xTe/Cd1 − yZnyTe |
|
| Vol 50, No 13 (2016) |
Microelectronic and Nanoelectronic Technology |
Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface |
|
| Vol 50, No 13 (2016) |
Microelectronic and Nanoelectronic Technology |
Formation of field-emission emitters by microwave plasma-chemical synthesis of nanocarbon structures |
|
| Vol 50, No 13 (2016) |
Microelectronic Devices and Systems |
Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array |
|
| Vol 50, No 13 (2016) |
Microelectronic Devices and Systems |
The effect of the electron–phonon interaction on reverse currents of GaAs-based p–n junctions |
|
| Vol 50, No 13 (2016) |
Nanotechnology |
Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation |
|
| Vol 50, No 13 (2016) |
Nanotechnology |
Nanostructured current sources based on carbon nanotubes excited by β radiation |
|
| Vol 50, No 13 (2016) |
Nanotechnology |
Formation of carbon nanotubes on an amorphous Ni25Ta58N17 alloy film by chemical vapor deposition |
|
| Vol 50, No 13 (2016) |
Methods and Technique of Measurements |
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy |
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| Vol 50, No 13 (2016) |
Methods and Technique of Measurements |
Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals |
|
| Vol 51, No 1 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion of interstitial magnesium in dislocation-free silicon |
|
| Vol 51, No 1 (2017) |
Electronic Properties of Semiconductors |
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field |
|
| Vol 51, No 1 (2017) |
Electronic Properties of Semiconductors |
Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices |
|
| Vol 51, No 1 (2017) |
Electronic Properties of Semiconductors |
Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors |
|
| Vol 51, No 1 (2017) |
Electronic Properties of Semiconductors |
Lifetime of excess electrons in Cu–Zn–Sn–Se powders |
|
| Vol 51, No 1 (2017) |
Surfaces, Interfaces, and Thin Films |
Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface |
|
| Vol 51, No 1 (2017) |
Surfaces, Interfaces, and Thin Films |
On the growth, structure, and surface morphology of epitaxial CdTe films |
|
| Vol 51, No 1 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells |
|
| Vol 51, No 1 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Spin-dependent tunneling recombination in heterostructures with a magnetic layer |
|
| Vol 51, No 1 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures |
|
| Vol 51, No 1 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds |
|
| Vol 51, No 1 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Fabrication of oxide heterostructures for promising solar cells of a new generation |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Optimization of the parameters of power sources excited by β-radiation |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Anodes for Li-ion batteries based on p-Si with self-organized macropores |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
|
| Vol 51, No 1 (2017) |
Physics of Semiconductor Devices |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InGaN/GaN light-emitting diode microwires of submillimeter length |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Surface texture of single-crystal silicon oxidized under a thin V2O5 layer |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study |
|
| Vol 51, No 2 (2017) |
Electronic Properties of Semiconductors |
Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y |
|
| Vol 51, No 2 (2017) |
Electronic Properties of Semiconductors |
Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors |
|
| Vol 51, No 2 (2017) |
Electronic Properties of Semiconductors |
On the thermopower and thermomagnetic properties of ErxSn1–xSe solid solutions |
|
| Vol 51, No 2 (2017) |
Electronic Properties of Semiconductors |
Field diffusion in disordered organic materials under conditions of occupied deep states |
|
| Vol 51, No 2 (2017) |
Electronic Properties of Semiconductors |
Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields |
|
| Vol 51, No 2 (2017) |
Spectroscopy, Interaction with Radiation |
Raman scattering in InP doped by Be+-ion implantation |
|
| Vol 51, No 2 (2017) |
Surfaces, Interfaces, and Thin Films |
Influence of the doping type and level on the morphology of porous Si formed by galvanic etching |
|
| Vol 51, No 2 (2017) |
Surfaces, Interfaces, and Thin Films |
Study of silicon doped with zinc ions and annealed in oxygen |
|
| Vol 51, No 2 (2017) |
Surfaces, Interfaces, and Thin Films |
Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes |
|
| Vol 51, No 2 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction |
|
| Vol 51, No 2 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
New mechanism of semiconductor polarization at the interface with an organic insulator |
|
| Vol 51, No 2 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices |
|
| Vol 51, No 2 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth |
|
| Vol 51, No 2 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al2O3 of different thicknesses |
|
| Vol 51, No 2 (2017) |
Carbon Systems |
Thermal stability of hydrogenated small-diameter carbon nanotubes |
|
| Vol 51, No 2 (2017) |
Carbon Systems |
On the theory of adsorption on graphene-like compounds |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Specific features of waveguide recombination in laser structures with asymmetric barrier layers |
|
| Vol 51, No 2 (2017) |
Physics of Semiconductor Devices |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
|
| Vol 51, No 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
|
| Vol 51, No 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination |
|
| Vol 51, No 3 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion |
|
| Vol 51, No 3 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Crystal defects in solar cells produced by the method of thermomigration |
|
| Vol 51, No 3 (2017) |
Electronic Properties of Semiconductors |
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength |
|
| Vol 51, No 3 (2017) |
Electronic Properties of Semiconductors |
Atomic configuration and charge state of hydrogen at dislocations in silicon |
|
| Vol 51, No 3 (2017) |
Electronic Properties of Semiconductors |
Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers |
|
| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Effect of H+ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region |
|
| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
|
| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals |
|
| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Radiative d–d transitions at tungsten centers in II–VI semiconductors |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Valence-band offsets in strained SiGeSn/Si layers with different tin contents |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Formation of silicon nanocrystals in multilayer nanoperiodic a-SiOx/insulator structures from the results of synchrotron investigations |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
|
| Vol 51, No 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field |
|
| Vol 51, No 3 (2017) |
Physics of Semiconductor Devices |
Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure |
|
| Vol 51, No 3 (2017) |
Physics of Semiconductor Devices |
A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum |
|
| Vol 51, No 3 (2017) |
Physics of Semiconductor Devices |
Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode |
|
| Vol 51, No 3 (2017) |
Physics of Semiconductor Devices |
AlN/GaN heterostructures for normally-off transistors |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Properties of ZnO:Er3+ films obtained by the sol–gel method |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of energy density on the target on SnO2:Sb film properties when using a high-speed particle separator |
|
| Vol 51, No 4 (2017) |
Electronic Properties of Semiconductors |
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2) |
|
| Vol 51, No 4 (2017) |
Surfaces, Interfaces, and Thin Films |
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation |
|
| Vol 51, No 4 (2017) |
Surfaces, Interfaces, and Thin Films |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe |
|
| Vol 51, No 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron mobility in the inversion layers of fully depleted SOI films |
|
| Vol 51, No 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions |
|
| Vol 51, No 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
|
| Vol 51, No 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |
|
| Vol 51, No 4 (2017) |
Amorphous, Vitreous, and Organic Semiconductors |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Specific features of ZnCdS nanoparticles synthesized in different solvents |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Ab initio calculations of the electron spectrum and density of states of TlFeS2 and TlFeSe2 crystals |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments |
|
| Vol 51, No 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of gamma irradiation on the photoluminescence of porous silicon |
|
| Vol 51, No 4 (2017) |
Carbon Systems |
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes |
|
| Vol 51, No 4 (2017) |
Carbon Systems |
Optical transparency of graphene layers grown on metal surfaces |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Optimization of vertical cavity lasers with intracavity metal layers |
|
| Vol 51, No 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
|
| Vol 51, No 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment |
|
| Vol 51, No 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy |
|
| Vol 51, No 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Silicon nanowire array architecture for heterojunction electronics |
|
| Vol 51, No 5 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Negative annealing in silicon after the implantation of high-energy sodium ions |
|
| Vol 51, No 5 (2017) |
Electronic Properties of Semiconductors |
Ab initio calculations of phonon dispersion in CdGa2Se4 |
|
| Vol 51, No 5 (2017) |
Electronic Properties of Semiconductors |
Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering |
|
| Vol 51, No 5 (2017) |
Electronic Properties of Semiconductors |
Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs |
|
| Vol 51, No 5 (2017) |
Spectroscopy, Interaction with Radiation |
Optical an photoelectric properties odf ZnSe:Ti crystals |
|
| Vol 51, No 5 (2017) |
Spectroscopy, Interaction with Radiation |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
|
| Vol 51, No 5 (2017) |
Surfaces, Interfaces, and Thin Films |
Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium |
|
| Vol 51, No 5 (2017) |
Surfaces, Interfaces, and Thin Films |
Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Injection-induced terahertz electroluminescence from silicon p–n structures |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1 |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |
|
| Vol 51, No 5 (2017) |
Amorphous, Vitreous, and Organic Semiconductors |
Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals |
|
| Vol 51, No 5 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the photoconductivity of TlInSe2 |
|
| Vol 51, No 5 (2017) |
Carbon Systems |
Effect of hydrogen desorption on the mechanical properties and electron structure of diamond-like carbon nanothreads |
|
| Vol 51, No 5 (2017) |
Carbon Systems |
Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
Laser (λ = 809 nm) power converter based on GaAs |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates |
|
| Vol 51, No 5 (2017) |
Physics of Semiconductor Devices |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
| Vol 51, No 5 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
|
| Vol 51, No 5 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe2 |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Transport properties of cobalt monosilicide and its alloys at low temperatures |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi0.5Sb1.5Te3 solid solution |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Calculation of the thermal conductivity of nanostructured Bi2Te3 with the real phonon spectrum taken into account |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of InSb〈Zn〉 in nanoporous glass |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Galvanomagnetic properties of Bi85Sb15 thin films on different substrates |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data |
|
| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Synthesis and electrical properties of Bi2Te3-based thermoelectric materials doped with Er, Tm, Yb, and Lu |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Preparation and properties of Zn4Sb3-based thermoelectric material |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Fe-based semiconducting Heusler alloys |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Simulation of the field-activated sintering of thermoelectric materials |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power |
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| Vol 51, No 6 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride |
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| Vol 51, No 6 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Polymorphic transformations and thermal expansion in AgCuSe0.5(S,Te)0.5 crystals |
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| Vol 51, No 6 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
On a neutron detector based on TlInSe2 crystals intercalated with a lithium isotope |
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| Vol 51, No 6 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Study of the distribution profile of iron ions implanted into silicon |
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| Vol 51, No 6 (2017) |
Electronic Properties of Semiconductors |
Electrical properties of ZnSe crystals doped with transition elements |
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| Vol 51, No 6 (2017) |
Electronic Properties of Semiconductors |
Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field |
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| Vol 51, No 6 (2017) |
Electronic Properties of Semiconductors |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
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| Vol 51, No 6 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Classical magnetoresistance of a two-component system induced by thermoelectric effects |
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| Vol 51, No 6 (2017) |
Amorphous, Vitreous, and Organic Semiconductors |
Influence of the samarium impurity on the structure and surface morphology of Se95Te5 chalcogenide glassy semiconductor |
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| Vol 51, No 6 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide |
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| Vol 51, No 6 (2017) |
Physics of Semiconductor Devices |
n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films |
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| Vol 51, No 6 (2017) |
Physics of Semiconductor Devices |
On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects |
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| Vol 51, No 6 (2017) |
Physics of Semiconductor Devices |
Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold |
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| Vol 51, No 6 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing |
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| Vol 51, No 6 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering |
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| Vol 51, No 6 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation |
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| Vol 51, No 6 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural features of Sm1–xEuxS thin polycrystalline films |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Structure of bismuth films obtained using an array of identically oriented single-crystal bismuth islands preliminarily grown on a substrate |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Resistance and thermoelectric power of carbon fibers upon changing the conductivity type |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On the conduction-band structure of bismuth telluride: optical absorption data |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Measurement of the thickness of block-structured bismuth films by atomic-force microscopy combined with selective chemical etching |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Segmented thermoelectric unicouple for an operating temperature range of 30–320°C |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric battery based on bundles of Bi and Sb nanowires in anodic alumina matrices |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Experimental and theoretical study of the thermoelectric properties of copper selenide |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Simulation of the Qmax mode of a thermoelectric cooler taking into account thermal resistances at the cool and hot sides |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric power of Bi92Sb8 and Bi85Sb15 thin films |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Structure of the Cu2Se compound produced by different methods |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Prospects of using rare-earth hexaborides in thermoelectric single-photon detectors |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On the thermal conductivity of the gradient-inhomogeneous branches of thermoelements at a difference in the operating temperature |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Dependence of the surface morphology of ultrathin bismuth films on mica substrates on the film thickness |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Galvanomagnetic properties of bismuth films with a thin antimony coating or sublayer |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Local thermoelectric effects in wide-gap semiconductors |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Preparation and study of the thermoelectric properties of Fe2TiSn1–xSix Heusler alloys |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Estimation of the band gap of a series of new thermoelectric materials |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On a carbon nanostructure-based thermoelectric converter with record parameters |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric materials for different temperature levels |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Optimization of segmented cooling leg |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric and mechanical properties of Bi0.5Sb1.5Te3 solid solution prepared by melt solidification in liquid |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Preparation and properties of Zn4Sb3-based thermoelectric material |
|
| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Charge-carrier density collapse in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of CexNdyCo4Sb12 skutterudites |
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| Vol 51, No 7 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric energy converters: Environmental aspects |
|
| Vol 51, No 7 (2017) |
Electronic Properties of Semiconductors |
Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it |
|
| Vol 51, No 7 (2017) |
Electronic Properties of Semiconductors |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
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| Vol 51, No 7 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Purcell effect in disordered one-dimensional photonic crystals |
|
| Vol 51, No 7 (2017) |
Physics of Semiconductor Devices |
Varistor effect in highly heterogeneous polymer–ZnO systems |
|
| Vol 51, No 7 (2017) |
Physics of Semiconductor Devices |
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers |
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| Vol 51, No 7 (2017) |
Physics of Semiconductor Devices |
Utilizing nanotechnology and novel materials and concepts for advanced thermoelectric and thermal management technology development |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Analysis of the crystal structure of alloys of the [(Ge, Sn, Pb)(Te, Se)]m[(Bi, Sb)2(Te, Se)3]n (m, n = 0, 1, 2,...) family within the theory of closely packed spheres |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Anisotropy of the thermopower in higher silicide of transitions metals |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Response of thermoelectric parameters of Bi0.5Sb1.5Te3 films to secondary recrystallization |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Determination of the thermoelectric efficiency of thermoelectric materials from measurements of linear series of branches for n- and p-types of conductivity |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Development of a mathematical model for optimizing the design of an automotive thermoelectric generator taking into account the influence of its hydraulic resistance on the engine power |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelements from antimony- and bismuth-chalcogenide alloys |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Specific features of the transport properties of the Lu0.1Bi1.9Te3 compound |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
On the band structure of Sb2Te3–xSex (0 ≤ x ≤ 0.1): Kinetic and optical data |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Contact resistance in spark plasma sintered segmented legs |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
CeB6 thin films produced on different substrates by electron-beam deposition |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of Bi2Te2.4Se0.6 solid solutions of different particle-size composition |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of the Mg2Ge0.3Sn0.7 solid solution with p-type conductivity |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Optimization of a segmented generating leg |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Optimum operating-temperature range and lifetime estimate for ZnSb:0.1 at % Cu thermoelectrics |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Superconducting properties of (Pb0.05Sn0.95)Te doped with indium under conditions of hydrostatic compression |
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| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Structure of Bi2Se0.3Te2.7 alloy plates obtained by crystallization in a flat cavity by the Bridgman method |
|
| Vol 51, No 8 (2017) |
XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 |
Thermoelectric properties of Bi0.5Sb1.5Te3 ribbons prepared by melt spinning |
|
| Vol 51, No 8 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Mn0.1Ag0.9In4.7S7.6 single crystals: Crystal structure, band gap, and thermal expansion |
|
| Vol 51, No 8 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-temperature diffusion of magnesium in dislocation-free silicon |
|
| Vol 51, No 8 (2017) |
Electronic Properties of Semiconductors |
Complex structure of optical transitions from the core d-levels of InAs and InSb crystals |
|
| Vol 51, No 8 (2017) |
Electronic Properties of Semiconductors |
Impurity levels in Hg3In2Te6 crystals |
|
| Vol 51, No 8 (2017) |
Spectroscopy, Interaction with Radiation |
Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers |
|
| Vol 51, No 8 (2017) |
Surfaces, Interfaces, and Thin Films |
Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers |
|
| Vol 51, No 8 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the propagation of charge carriers fluxes in the thin layer of a plane-parallel solid-state structure with scattering at the boundaries of the layer taken into account |
|
| Vol 51, No 8 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of traps in silicon dioxide on the breakdown of MOS structures |
|
| Vol 51, No 8 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of electrolyte temperature on the cathodic deposition of Ge nanowires on in and Sn particles in aqueous solutions |
|
| Vol 51, No 8 (2017) |
Carbon Systems |
Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) |
|
| Vol 51, No 8 (2017) |
Physics of Semiconductor Devices |
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |
|
| Vol 51, No 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |
|
| Vol 51, No 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100) |
|
| Vol 51, No 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
|
| Vol 51, No 8 (2017) |
Erratum |
Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” |
|
| Vol 51, No 9 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Residual stresses in silicon and their evolution upon heat treatment and irradiation |
|
| Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
|
| Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Temperature dependence of the atomic structure and electrical activity of defects in ZnSb thermoelectric lightly doped with copper |
|
| Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
|
| Vol 51, No 9 (2017) |
Electronic Properties of Semiconductors |
Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon |
|
| Vol 51, No 9 (2017) |
Surfaces, Interfaces, and Thin Films |
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures |
|
| Vol 51, No 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
|
| Vol 51, No 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
|
| Vol 51, No 9 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
High-temperature annealing of macroporous silicon in an inert-gas flow |
|
| Vol 51, No 9 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Characteristic properties of macroporous silicon sintering in an argon atmosphere |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Derivation of an analytical expression for a physical process from an experimental curve with kinks |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Electric-field sensor based on a double quantum dot in a microcavity |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
High-voltage MIS-gated GaN transistors |
|
| Vol 51, No 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of low-dimensional structures in the InSb/AlAs heterosystem |
|
| Vol 51, No 9 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films |
|
| Vol 51, No 10 (2017) |
Review |
Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell |
|
| Vol 51, No 10 (2017) |
Review |
Tight-binding simulation of silicon and germanium nanocrystals |
|
| Vol 51, No 10 (2017) |
Electronic Properties of Semiconductors |
Effects of local photoexcitation of high-concentration charge carriers in silicon |
|
| Vol 51, No 10 (2017) |
Spectroscopy, Interaction with Radiation |
Reflectance spectra of p-Bi2Te3:Sn crystals in a wide IR region |
|
| Vol 51, No 10 (2017) |
Surfaces, Interfaces, and Thin Films |
Interdiffusion and phase formation in the Fe–TiO2 thin-film system |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mechanism of resistive switching in films based on partially fluorinated graphene |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Criterion for strong localization on a semiconductor surface in the Thomas–Fermi approximation |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Measurement of the lifetimes of vibrational states of DNA molecules in functionalized complexes of semiconductor quantum dots |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence of perovskite CsPbX3 (X = Cl, Br, I) nanocrystals and solid solutions on their basis |
|
| Vol 51, No 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field |
|
| Vol 51, No 10 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
X-ray photoelectron spectroscopy studies of ZnSxSe1–x nanostructures produced in a porous aluminum-oxide matrix |
|
| Vol 51, No 10 (2017) |
Physics of Semiconductor Devices |
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation |
|
| Vol 51, No 10 (2017) |
Physics of Semiconductor Devices |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
|
| Vol 51, No 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure |
|
| Vol 51, No 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region |
|
| Vol 51, No 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures |
|
| Vol 51, No 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
(FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Optical thyristor based on GaAs/InGaP materials |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Thermoelectric effects in nanoscale layers of manganese silicide |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Effect of electric field on the ratio between the rashba and dresselhaus parameters in III–V heterostructures |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Features of the selective manganese doping of GaAs structures |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Contactless characterization of manganese and carbon delta-layers in gallium arsenide |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Inhomogeneous dopant distribution in III–V nanowires |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Optimization of the superlattice parameters for THz diodes |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Amplification of terahertz radiation in a plasmon n–i–p–i graphene structure with charge-carrier injection |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Cyclotron resonance features in a three-dimensional topological insulators |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition |
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| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Manifestation of PT symmetry in the exciton spectra of quantum wells |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission |
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| Vol 51, No 12 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential |
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| Vol 51, No 12 (2017) |
Electronic Properties of Semiconductors |
Radiation-produced defects in germanium: Experimental data and models of defects |
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| Vol 51, No 12 (2017) |
Electronic Properties of Semiconductors |
Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method |
|
| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials |
|
| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
Effect of Ag in CdSe thin films prepared using thermal evaporation |
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| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications |
|
| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
Effect of high voltage electric field on structure and property of PEDOT:PSS film |
|
| Vol 51, No 12 (2017) |
Surfaces, Interfaces, and Thin Films |
A comparative study on the electronic and optical properties of Sb2Se3 thin film |
|
| Vol 51, No 12 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions |
|
| Vol 51, No 12 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer |
|
| Vol 51, No 12 (2017) |
Physics of Semiconductor Devices |
Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode |
|
| Vol 51, No 12 (2017) |
Physics of Semiconductor Devices |
Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts |
|
| Vol 51, No 12 (2017) |
Physics of Semiconductor Devices |
Single electron transistor: Energy-level broadening effect and thermionic contribution |
|
| Vol 51, No 12 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Patterning approach for detecting defect in device manufacturing |
|
| Vol 51, No 12 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode |
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| Vol 51, No 13 (2017) |
Basic Research |
On the Existence of Transverse Acoustoelectric Stoneley Waves and Their Applicability in Acoustonanoelectronics |
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| Vol 51, No 13 (2017) |
Materials for Electronic Engineering |
Production of Silicon Nanoparticles for Use in Solar Cells |
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| Vol 51, No 13 (2017) |
Materials for Electronic Engineering |
Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics |
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| Vol 51, No 13 (2017) |
Materials for Electronic Engineering |
Structure and Properties of Nanostructured YBa2Cu3O7–δ, BiFeO3, and Fe3O4 |
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| Vol 51, No 13 (2017) |
Materials for Electronic Engineering |
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy |
|
| Vol 51, No 13 (2017) |
Materials for Electronic Engineering |
Modification of the Surface of Nickel by the Femtosecond Laser Pulses |
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| Vol 51, No 13 (2017) |
Microelectronic and Nanoelectronic Technology |
Electrical Conductivity of Film Composites Based on Polyvinyledene Fluoride with Carbon Nanotubes |
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| Vol 51, No 13 (2017) |
Microelectronic and Nanoelectronic Technology |
Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems |
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| Vol 51, No 13 (2017) |
Microelectronic Devices and Systems |
Noise in Spectrozonal Multichannel Photocells for Image Converters with Color Separation and Vertically Integrated p−n Junctions |
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| Vol 51, No 13 (2017) |
Microelectronic Devices and Systems |
Simulating a Cell Based on a Three-Dimensional Heterojunction with Distributed Charge-Carrier Generation |
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| Vol 51, No 13 (2017) |
Nanotechnology |
Narrow-Spectrum Photosensitive Structures Based on J-Aggregates of Cyanine Dyes |
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| Vol 51, No 13 (2017) |
Nanotechnology |
Formation of Zinc-Oxide Nanorods by the Precipitation Method |
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| Vol 51, No 13 (2017) |
Nanotechnology |
Specific Features of Vapor–Liquid–Solid Nanostructure Growth on the Surface of SnS Films during Plasma Treatment |
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| Vol 51, No 13 (2017) |
Methods and Technique of Measurements |
Determining the Free Carrier Density in CdxHg1–xTe Solid Solutions from Far-Infrared Reflection Spectra |
|
| Vol 52, No 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
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| Vol 52, No 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Investigation of a Polariton Condensate in Micropillars in a High Magnetic Field |
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| Vol 52, No 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Electron Effective Mass and g Factor in Wide HgTe Quantum Wells |
|
| Vol 52, No 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
|
| Vol 52, No 1 (2018) |
Electronic Properties of Semiconductors |
On Mobility of Definite Energy Charge Carriers |
|
| Vol 52, No 1 (2018) |
Electronic Properties of Semiconductors |
Effect of Hydrostatic Pressure on the Static Permittivity of Germanium |
|
| Vol 52, No 1 (2018) |
Spectroscopy, Interaction with Radiation |
Infrared Reflection Spectra of Pb1–xSnxSe (x = 0.2, 0.34) Topological Insulator Films on a ZnTe/GaAs Substrate and the Vibrational Modes of Multilayer Structures |
|
| Vol 52, No 1 (2018) |
Surfaces, Interfaces, and Thin Films |
Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films |
|
| Vol 52, No 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths |
|
| Vol 52, No 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
|
| Vol 52, No 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots |
|
| Vol 52, No 1 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
On the Electret Effect in Polymer–Ferroelectric Piezoceramic Composites with Various Values of the Electronegativity of the Polymer Matrix and Piezophase Cations |
|
| Vol 52, No 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions |
|
| Vol 52, No 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Peculiarities of the Properties of III–V Semiconductors in a Multigrain Structure |
|
| Vol 52, No 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide |
|
| Vol 52, No 1 (2018) |
Physics of Semiconductor Devices |
Two-Terminal Tandem Solar Cells DSC/c-Si: Optimization of TiO2-based Photoelectrode Parameters |
|
| Vol 52, No 1 (2018) |
Physics of Semiconductor Devices |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
|
| Vol 52, No 1 (2018) |
Physics of Semiconductor Devices |
On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Combined Ultramicrotomy and Atomic Force Microscopy Study of the Structure of a Bulk Heterojunction in Polymer Solar Cells |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the Structure of Cadmium-Sulfide Nanowire Crystals Synthesized by Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the Modified Structure of a Quantum Cascade Laser |
|
| Vol 52, No 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a New Mechanism for the Realization of Ohmic Contacts |
|
| Vol 52, No 2 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Conductivity of Ga2O3–GaAs Heterojunctions |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Frequency Dependence of the Conductivity of Disordered Semiconductors in the Region of the Transition to the Fixed-Range Hopping Regime |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Dielectric Properties and Conductivity of Ag-Doped TlGaS2 Single Crystals |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Electrically Active States of Charge Capture and Transfer Causing Slow Recombination in Thallium-Bromide Crystals at Low Temperatures |
|
| Vol 52, No 2 (2018) |
Electronic Properties of Semiconductors |
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers |
|
| Vol 52, No 2 (2018) |
Spectroscopy, Interaction with Radiation |
Investigation of the Far-IR Reflection Spectra of SmS Single Crystals and Polycrystals in the Homogeneity Range |
|
| Vol 52, No 2 (2018) |
Spectroscopy, Interaction with Radiation |
Effect of Heat and Plasma Treatments on the Photoluminescence of Zinc-Oxide Films |
|
| Vol 52, No 2 (2018) |
Surfaces, Interfaces, and Thin Films |
Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition |
|
| Vol 52, No 2 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping |
|
| Vol 52, No 2 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
|
| Vol 52, No 2 (2018) |
Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites |
Optical Properties of Tellurium-Based Chalcogenide Alloys in the Far Infrared Region (λ > 30 μm) |
|
| Vol 52, No 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates |
|
| Vol 52, No 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
|
| Vol 52, No 2 (2018) |
Carbon Systems |
On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal |
|
| Vol 52, No 2 (2018) |
Carbon Systems |
Optimization of the Parameters of PbSB-based Polycrystalline Photoresistors |
|
| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC |
|
| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures |
|
| Vol 52, No 2 (2018) |
Physics of Semiconductor Devices |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
|
| Vol 52, No 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical Activity of Extended Defects in Multicrystalline Silicon |
|
| Vol 52, No 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Luminescence Properties of CdxZn1 – xO Thin Films |
|
| Vol 52, No 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics |
|
| Vol 52, No 2 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Electrical Breakdown in Pure n- and p-Si |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals |
|
| Vol 52, No 3 (2018) |
Electronic Properties of Semiconductors |
Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers |
|
| Vol 52, No 3 (2018) |
Surfaces, Interfaces, and Thin Films |
Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles |
|
| Vol 52, No 3 (2018) |
Surfaces, Interfaces, and Thin Films |
Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In2O3 Films |
|
| Vol 52, No 3 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface |
|
| Vol 52, No 3 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon |
|
| Vol 52, No 3 (2018) |
Carbon Systems |
Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Optimal Doping of Diode Current Interrupters |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE |
|
| Vol 52, No 3 (2018) |
Physics of Semiconductor Devices |
Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules |
|
| Vol 52, No 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures |
|
| Vol 52, No 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of Cu2O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization |
|
| Vol 52, No 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |
|
| Vol 52, No 3 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte |
|
| Vol 52, No 4 (2018) |
Article |
Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3 |
|
| Vol 52, No 4 (2018) |
Article |
Structural, Mechanical and Thermodynamic Properties of Cu2CoXS4 (X = Si, Ge, Sn) Studied by Density Functional Theory |
|
| Vol 52, No 4 (2018) |
Article |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
THz Stimulated Emission from Simple Superlattice in Positive Differential Conductivity Region |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Experimental Observation of Dyakonov Plasmons in the Mid-Infrared |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Purcell Effect in Tamm Plasmon Structures with QD Emitter |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Localization-Delocalization Transition in Disordered One-Dimensional Exciton-Polariton System |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
Partial Electron Localization in a Finite-Size Superlattice Placed in an Electric Field |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Red Single-Photon Emission from InAs/AlGaAs Quantum Dots |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Zeeman Splitting of Electron Spectrum in HgTe Quantum Wells Near the Dirac Point |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Floquet Engineering of Gapped 2D Materials |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Is the Edge States Energy Spectrum of a 2D Topological Insulator Linear? |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Photon Echo from an Ensemble of (In,Ga)As Quantum Dots |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Electronic States and Persistent Currents in Nanowire Quantum Ring |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Quantum Dynamics of a Domain Wall in the Presence of Dephasing |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Impact of UV Pulsed Laser Radiation and of the Electron Flow on Dielectric States of Polymer Composite Nanomaterial Based on LDPE Matrix |
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| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Spin Related Phenomena In Nanostructures |
Photocharging Dynamics in Colloidal CdS Quantum Dots Visualized by Electron Spin Coherence |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Calculation of Energy States of Excitons in Square Quantum Wells |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Spectroscopy of PbS and PbSe Quantum Dots in Fluorine Phosphate Glasses |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Effect of Transverse Electric Field on Polariton Reflectance Spectra of Wide Quantum Wells |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
The Impact of the Substrate Material on the Optical Properties of 2D WSe2 Monolayers |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Dangling Bond Spins Controlling Recombination Dynamics of Excitons in Colloidal Nanocrystals and Nanoplatelets |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures |
Plasmon-Excitonic Polaritons in Metal-Semiconductor Nanostructures with Quantum Wells |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Polymer Composition Influence on Optical Properties of Laser-Generated Au Nanoparticles Based Nanocomposites |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Luminescence Decay of Colloidal Quantum Dots and Stretched Exponential (Kohlrausch) Relaxation Function |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Geometry Optimization and Charge Density Distribution of Single Layer of ZN-Based Metal-Organic Framework |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
TiN Nanoporous Electrode Covered by Single Cell as Bio-Electronic Sensor of Radiation Hazard |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
The Features of GaAs Nanowire SEM Images |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Ion Synthesis: Si–Ge Quantum Dots |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
New Method of Porous Ge Layer Fabrication: Structure and Optical Properties |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Fabrication of Silicon Nanostructures for Application in Photonics |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Сoncentric GaAs Nanorings Growth Modelling |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Nanoparticle Formation in Zn+ and O+ Ion Sequentially Implanted SiO2 Film |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi2 Nanocrystals Into p-Si(001) |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine |
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| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Air-Oxidation of Nb Nano-Films |
|
| Vol 52, No 6 (2018) |
Electronic Properties of Semiconductors |
AC Electrical Conductivity of FeIn2Se4 Single Crystals |
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| Vol 52, No 6 (2018) |
Electronic Properties of Semiconductors |
Contribution of Iron Clusters to the Magnetic Properties of Pb1 – yFeyTe Alloys |
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| Vol 52, No 6 (2018) |
Electronic Properties of Semiconductors |
Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures |
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| Vol 52, No 6 (2018) |
Electronic Properties of Semiconductors |
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |
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| Vol 52, No 6 (2018) |
Electronic Properties of Semiconductors |
On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
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| Vol 52, No 6 (2018) |
Spectroscopy, Interaction with Radiation |
Rb1 – xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study |
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| Vol 52, No 6 (2018) |
Spectroscopy, Interaction with Radiation |
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations |
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| Vol 52, No 6 (2018) |
Surfaces, Interfaces, and Thin Films |
Optical Properties of Multilayered Sol–Gel Zinc-Oxide Films |
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| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
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| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method |
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| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum Oscillations of Photoconductivity Relaxation in p–i–n GaAs/InAs/AlAs Heterodiodes |
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| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
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| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Properties of II–VI and III–V Semiconductor Quantum Dots |
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| Vol 52, No 6 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure |
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| Vol 52, No 6 (2018) |
Carbon Systems |
Effect of the Dehydrogenation of Graphane on Its Mechanical and Electronic Properties |
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| Vol 52, No 6 (2018) |
Carbon Systems |
On the Possibility of the Propagation of Solitary Electromagnetic Waves in Bigraphene |
|
| Vol 52, No 6 (2018) |
Physics of Semiconductor Devices |
High-Sensitivity Photodetector Based on Atomically Thin MoS2 |
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| Vol 52, No 6 (2018) |
Physics of Semiconductor Devices |
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal |
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| Vol 52, No 6 (2018) |
Physics of Semiconductor Devices |
Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate |
|
| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
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| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
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| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
|
| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation |
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| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Variation in the Conductivity of Polyaniline Nanotubes During Their Formation |
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| Vol 52, No 7 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions |
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| Vol 52, No 7 (2018) |
Electronic Properties of Semiconductors |
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1–x–ySnxVyTe Alloys upon Doping |
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| Vol 52, No 7 (2018) |
Electronic Properties of Semiconductors |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
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| Vol 52, No 7 (2018) |
Electronic Properties of Semiconductors |
Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation |
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| Vol 52, No 7 (2018) |
Spectroscopy, Interaction with Radiation |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
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| Vol 52, No 7 (2018) |
Spectroscopy, Interaction with Radiation |
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates |
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| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Transverse Nernst–Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering |
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| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
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| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation |
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| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
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| Vol 52, No 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells |
|
| Vol 52, No 7 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Photoelectric Properties of ZnO Threadlike Crystals |
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| Vol 52, No 7 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K |
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| Vol 52, No 7 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure |
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| Vol 52, No 7 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods |
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| Vol 52, No 7 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Modification of Photoconductivity Spectra in ZnO–CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation |
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| Vol 52, No 7 (2018) |
Carbon Systems |
Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates |
|
| Vol 52, No 7 (2018) |
Carbon Systems |
Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering |
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| Vol 52, No 7 (2018) |
Carbon Systems |
Effect of Electron–Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene |
|
| Vol 52, No 7 (2018) |
Physics of Semiconductor Devices |
Study of Deep Levels in a HIT Solar Cell |
|
| Vol 52, No 7 (2018) |
Physics of Semiconductor Devices |
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers |
|
| Vol 52, No 7 (2018) |
Physics of Semiconductor Devices |
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency |
|
| Vol 52, No 7 (2018) |
Physics of Semiconductor Devices |
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |
|
| Vol 52, No 7 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers |
|
| Vol 52, No 7 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching |
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| Vol 52, No 8 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure |
|
| Vol 52, No 8 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Formation of Precipitates in Si Implanted with 64Zn+ and 16O+ Ions |
|
| Vol 52, No 8 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits |
|
| Vol 52, No 8 (2018) |
Electronic Properties of Semiconductors |
Electronic Processes in CdIn2Te4 Crystals |
|
| Vol 52, No 8 (2018) |
Electronic Properties of Semiconductors |
Optical Absorption of Copper-Activated Zinc-Sulfide Polycrystalline Layers |
|
| Vol 52, No 8 (2018) |
Electronic Properties of Semiconductors |
Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals |
|
| Vol 52, No 8 (2018) |
Surfaces, Interfaces, and Thin Films |
On Recombination Processes in CdS–PbS Films |
|
| Vol 52, No 8 (2018) |
Surfaces, Interfaces, and Thin Films |
Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Nonlinear Optical Properties of CdS/ZnS Quantum Dots in a High-Molecular-Weight Polyvinylpyrrolidone Matrix |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence of ZnS:Cu in a Polymethyl Methacrylate Matrix |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System |
|
| Vol 52, No 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| Vol 52, No 8 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System |
|
| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal |
|
| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation |
|
| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Application of Silicate Glasses with CdSxSe1–x Semiconductor Nanocrystals as Optical Thermometers and Optical Filters with a Controlled Absorption Edge |
|
| Vol 52, No 8 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Degradation of the Photoluminescence of ZnTPP and ZnTPP–C60 Thin Films under Gamma Irradiation |
|
| Vol 52, No 8 (2018) |
Physics of Semiconductor Devices |
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators |
|
| Vol 52, No 8 (2018) |
Physics of Semiconductor Devices |
Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes |
|
| Vol 52, No 8 (2018) |
Physics of Semiconductor Devices |
On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation |
|
| Vol 52, No 8 (2018) |
Physics of Semiconductor Devices |
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |
|
| Vol 52, No 8 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Crystal Structure and Band Gap of (MnIn2S4)1–x • (AgIn5S8)x Alloys |
|
| Vol 52, No 9 (2018) |
Spectroscopy, Interaction with Radiation |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
|
| Vol 52, No 9 (2018) |
Spectroscopy, Interaction with Radiation |
Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals |
|
| Vol 52, No 9 (2018) |
Surfaces, Interfaces, and Thin Films |
Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals |
|
| Vol 52, No 9 (2018) |
Surfaces, Interfaces, and Thin Films |
Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser |
|
| Vol 52, No 9 (2018) |
Surfaces, Interfaces, and Thin Films |
Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide |
|
| Vol 52, No 9 (2018) |
Surfaces, Interfaces, and Thin Films |
Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures |
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| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization) |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface |
|
| Vol 52, No 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
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| Vol 52, No 9 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films |
|
| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure |
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| Vol 52, No 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si |
|
| Vol 52, No 9 (2018) |
Carbon Systems |
Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide |
|
| Vol 52, No 9 (2018) |
Physics of Semiconductor Devices |
Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method |
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| Vol 52, No 9 (2018) |
Physics of Semiconductor Devices |
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range |
|
| Vol 52, No 9 (2018) |
Physics of Semiconductor Devices |
Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells |
|
| Vol 52, No 9 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method |
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| Vol 52, No 10 (2018) |
Electronic Properties of Semiconductors |
Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions |
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| Vol 52, No 10 (2018) |
Spectroscopy, Interaction with Radiation |
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering |
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| Vol 52, No 10 (2018) |
Spectroscopy, Interaction with Radiation |
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering |
|
| Vol 52, No 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities |
|
| Vol 52, No 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters |
|
| Vol 52, No 10 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
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| Vol 52, No 10 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method |
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| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Analysis of the Features of Hot-Carrier Degradation in FinFETs |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures |
|
| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes |
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| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
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| Vol 52, No 10 (2018) |
Physics of Semiconductor Devices |
Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography |
|
| Vol 52, No 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1 –xCdxTe Layers |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Spinodal Decomposition in InSb/AlAs Heterostructures |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Study of the Structural and Morphological Properties of HPHT Diamond Substrates |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation |
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| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Electrical Tunability of Terahertz Amplification in a Periodic Plasmon Graphene Structure with Charge-Carrier Injection |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Solar Cell Based on Core/Shell Nanowires |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Singularity of the Density of States and Transport Anisotropy in a Two-Dimensional Electron Gas with Spin-Orbit Interaction in an In-Plane Magnetic Field |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors |
|
| Vol 52, No 12 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating |
|
| Vol 52, No 12 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers |
|
| Vol 52, No 12 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe |
|
| Vol 52, No 12 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates |
|
| Vol 52, No 12 (2018) |
Carbon Systems |
Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface |
|
| Vol 52, No 12 (2018) |
Physics of Semiconductor Devices |
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers |
|
| Vol 52, No 12 (2018) |
Physics of Semiconductor Devices |
Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes |
|
| Vol 52, No 12 (2018) |
Physics of Semiconductor Devices |
Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects |
|
| Vol 52, No 12 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation |
|
| Vol 52, No 13 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
McCurdy’s Effects in the Thermal Conductivity of Elastically Anisotropic Crystals in the Mode of Knudsen Phonon-Gas Flow |
|
| Vol 52, No 13 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
|
| Vol 52, No 13 (2018) |
Electronic Properties of Semiconductors |
Features of the Electron Mobility in the n-InSe Layered Semiconductor |
|
| Vol 52, No 13 (2018) |
Electronic Properties of Semiconductors |
Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method |
|
| Vol 52, No 13 (2018) |
Electronic Properties of Semiconductors |
Conduction-Electron Spin Resonance in HgSe Crystals |
|
| Vol 52, No 13 (2018) |
Electronic Properties of Semiconductors |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
|
| Vol 52, No 13 (2018) |
Spectroscopy, Interaction with Radiation |
Intracenter Radiative Transitions at Tantalum Impurity Centers in Cadmium Telluride |
|
| Vol 52, No 13 (2018) |
Surfaces, Interfaces, and Thin Films |
Optical Studies of Heat Transfer in PbTe:Bi(Sb) Thin Films |
|
| Vol 52, No 13 (2018) |
Surfaces, Interfaces, and Thin Films |
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |
|
| Vol 52, No 13 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature |
|
| Vol 52, No 13 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Specific Features of the Electron Structure of ZnTPP Aggregated Forms: Data of Optical Measurements and Quantum-Chemical Calculations |
|
| Vol 52, No 13 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Ab Initio Study of the ZnSnSb2 Semiconductor |
|
| Vol 52, No 13 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of Hydrogen Peroxide on the Photoanodization of n-Si in the Breakdown Mode |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm) |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
|
| Vol 52, No 13 (2018) |
Physics of Semiconductor Devices |
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Determination of the Region of Thermal Stability of the Size and Phase Composition of Silver-Sulfide Semiconductor Nanoparticles |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters |
|
| Vol 52, No 14 (2018) |
Excitons in Nanostructures |
Classification of Energy States of the Exciton in Square Quantum Well |
|
| Vol 52, No 14 (2018) |
Excitons in Nanostructures |
Hot Excitons Contribution into the Photoluminescence of Self-Assembled Quantum Dots in CdSe/ZnSe Heterostructures under Different Excitation Conditions |
|
| Vol 52, No 14 (2018) |
Excitons in Nanostructures |
Resonant and Nonresonant Nonlinear Absorption in Colloidal Core/Shell Semiconductor Nanoplatelets |
|
| Vol 52, No 14 (2018) |
Excitons in Nanostructures |
Metastable Bound States of the Two-Dimensional Bimagnetoexcitons in the Lowest Landau Levels Approximation |
|
| Vol 52, No 14 (2018) |
Infrared Microwave Phenomena in Nanostructures |
Quantum Rings Dressed by a High-Frequency Electromagnetic Field |
|
| Vol 52, No 14 (2018) |
Infrared Microwave Phenomena in Nanostructures |
Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode |
|
| Vol 52, No 14 (2018) |
Infrared Microwave Phenomena in Nanostructures |
Terahertz Optoelectronics of Quantum Rings and Nanohelices |
|
| Vol 52, No 14 (2018) |
Infrared Microwave Phenomena in Nanostructures |
The Oscillations in ESR Spectra of Mn0.11Hg0.89Te in X- and Q-Bands |
|
| Vol 52, No 14 (2018) |
Microcavity and Photonic Crystals |
Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix |
|
| Vol 52, No 14 (2018) |
Microcavity and Photonic Crystals |
Dynamic Compression of Spinor Exciton-Polariton Systems in Semiconductor Microcavities |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Electromechanical Switch Based on InxGa1 –xAs Nanowires |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
CNT-Based Label-Free Electrochemical Sensing of Native DNA with Allele Single Nucleotide Polymorphism |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Photoacoustic Generation with Surface Noble Metal Nanostructures |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs |
|
| Vol 52, No 14 (2018) |
Nanostructure Devices |
Luminescent Methane Sensor Based on Energy Transfer from ZnS:Mn2+ Quantum Dots to Analyte Molecule |
|
| Vol 52, No 14 (2018) |
Plasmonics |
Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy |
|
| Vol 52, No 14 (2018) |
Plasmonics |
Spectral-Kinetic Properties of Nanosized Nickel Phthalocyanine Films on Silver Nanoparticle Monolayers |
|
| Vol 52, No 14 (2018) |
Plasmonics |
Transverse Magneto-Optical Kerr Effect in Magnetite Covered by Array of Gold Nanostripes |
|
| Vol 52, No 14 (2018) |
Plasmonics |
Spontaneous Emission Amplification in Silver—Organic Periodic Structures and Tamm Plasmon Structures |
|
| Vol 52, No 14 (2018) |
Spin-Related Phenomena in Nanostructures |
Weak Magnetic Field Resonance Effects in Diamond with Nitrogen-Vacancy Centers |
|
| Vol 52, No 14 (2018) |
Spin-Related Phenomena in Nanostructures |
On Derivation of Dresselhaus Spin-Splitting Hamiltonians in One-Dimensional Electron Systems |
|
| Vol 52, No 14 (2018) |
Spin-Related Phenomena in Nanostructures |
Spin Injection and Accumulation in the Planar NiFe–InSb–NiFe and NiFe–Cu–NiFe Spin Valves |
|
| Vol 52, No 14 (2018) |
Spin-Related Phenomena in Nanostructures |
Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices |
|
| Vol 52, No 14 (2018) |
Graphene |
Increasing Spin-Orbital Coupling at Relativistic Exchange Interaction of Electron-Hole Pairs in Graphene |
|
| Vol 52, No 14 (2018) |
Graphene |
High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |
|
| Vol 52, No 14 (2018) |
Graphene |
Model of Metamaterial Based on Graphene Scrolls and Carbon Nanotubes with Negative Refractive Index |
|
| Vol 52, No 14 (2018) |
Graphene |
Absorption in Finite-Length Chevron-Type Graphene Nanoribbons |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
Diode Lasers with Near-Surface Active Region |
|
| Vol 52, No 14 (2018) |
Lasers and Optoelectronic Devices |
A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers |
|
| Vol 52, No 15 (2018) |
Basic Research |
Field Characteristics of Spin-Torque Diode Sensitivity in the Presence of a Bias Current |
|
| Vol 52, No 15 (2018) |
Basic Research |
Electron Transport by a Transverse Acoustoelectric Stoneley Wave |
|
| Vol 52, No 15 (2018) |
Basic Research |
Predicting the Optical Properties of Matrix Composites Containing Spherical Inclusions with Metal Shells |
|
| Vol 52, No 15 (2018) |
Basic Research |
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells |
|
| Vol 52, No 15 (2018) |
Basic Research |
Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means |
|
| Vol 52, No 15 (2018) |
Electronics Materials |
Effect of the Plasma Functionalization of Carbon Nanotubes on the Formation of a Carbon Nanotube–Nickel Oxide Composite Electrode Material |
|
| Vol 52, No 15 (2018) |
Electronics Materials |
Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon–Phonon Coupling |
|
| Vol 52, No 15 (2018) |
Electronics Materials |
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers |
|
| Vol 52, No 15 (2018) |
Technological Processes and Routes |
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition |
|
| Vol 52, No 15 (2018) |
Technological Processes and Routes |
Using Combined Optical Techniques to Control the Shallow Etching Process |
|
| Vol 52, No 15 (2018) |
Technological Processes and Routes |
Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating |
|
| Vol 52, No 15 (2018) |
Technological Processes and Routes |
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures |
|
| Vol 52, No 15 (2018) |
Elements of Integral Electronics |
A Physical Model of an SOI Field-Effect Hall Sensor |
|
| Vol 52, No 15 (2018) |
Elements of Integral Electronics |
Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests |
|
| Vol 52, No 15 (2018) |
Elements of Integral Electronics |
Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy |
|
| Vol 52, No 15 (2018) |
Erratum |
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Vol 52, No 16 (2018) |
Physics of Semiconductor Devices |
Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications |
|
| Vol 52, No 16 (2018) |
Physics of Semiconductor Devices |
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode |
|
| Vol 52, No 16 (2018) |
Physics of Semiconductor Devices |
Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices |
|
| Vol 52, No 16 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction |
|
| Vol 52, No 16 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping |
|
| Vol 52, No 16 (2018) |
Surfaces, Interfaces, and Thin Films |
Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer |
|
| Vol 52, No 16 (2018) |
Surfaces, Interfaces, and Thin Films |
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas |
|
| Vol 52, No 16 (2018) |
Surfaces, Interfaces, and Thin Films |
Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Stable and Unstable Spatial Modes in a Resonator with a Half-Disk Shape |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Reflectometry of X-ray Whispering Gallery Waves Propagating along Liquid Meniscuses |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Polarization Properties of Photoluminescence of Anisotropic Polymer Films Containing Aligned Au Nanorods and Semiconductor Nanoparticles of Various Shape |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy \({\text{N}}_{2}^{ + }\)Ion Implantation |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Atomic Force Microscopy Study of Monodisperse Carbon Nanoparticles |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Polarized Retroreflection from Nanoporous III–V Semiconductors |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Si |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Growth of Textured Au–Fe/Fe Hybrid Nanocrystals on Oxidized Silicon Surface |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Influence of the Pore Structure on the Electron Barrier Height of Metal-Ceramic Nanomaterials Based on Gold-Anodic Aluminum Oxide |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Atomic Force Microscopy Local Oxidation of GeO Thin Films |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Growth Modes of GaN Plasma-Assisted MBE Nanowires |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
InGaN/GaN QDs Nanorods: Processing and Properties |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Formation and Properties of New Types of Metal–Dielectric Nanostructures for Creating Optical Metamaterials |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
New Advanced Hybrid Organic–Inorganic Complex |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3 |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Two Methods of Calculation Ternary Nanowire Composition |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Nucleation and Growth Modeling of Protein Crystals in Capillaries |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Luminescent Silicon Nanocrystals Prepared by Laser-Assisted Synthesis in Liquid for Imaging and Photovoltaic Applications |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS |
Manganese Doped Zinc Sulfide Quantum Dots as Efficient Photocatalyst for Dye Decolorization |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS |
Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate |
|
| Vol 52, No 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS |
Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands |
|
| Vol 53, No 1 (2019) |
Electronic Properties of Semiconductors |
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals |
|
| Vol 53, No 1 (2019) |
Electronic Properties of Semiconductors |
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium |
|
| Vol 53, No 1 (2019) |
Surfaces, Interfaces, and Thin Films |
Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals |
|
| Vol 53, No 1 (2019) |
Surfaces, Interfaces, and Thin Films |
Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping |
|
| Vol 53, No 1 (2019) |
Surfaces, Interfaces, and Thin Films |
Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures |
|
| Vol 53, No 1 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators |
|
| Vol 53, No 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements |
|
| Vol 53, No 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
| Vol 53, No 1 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films |
|
| Vol 53, No 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters |
|
| Vol 53, No 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining |
|
| Vol 53, No 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
| Vol 53, No 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Investigation into the Memristor Effect in Nanocrystalline ZnO Films |
|
| Vol 53, No 1 (2019) |
Carbon Systems |
A Chainlike Model of the Zigzag Edge Decoration of Graphene |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor |
|
| Vol 53, No 1 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence |
|
| Vol 53, No 1 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method |
|
| Vol 53, No 1 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
|
| Vol 53, No 2 (2019) |
Review |
Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) |
|
| Vol 53, No 2 (2019) |
Electronic Properties of Semiconductors |
Features of the Properties of Rare-Earth Semiconductors |
|
| Vol 53, No 2 (2019) |
Electronic Properties of Semiconductors |
Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions |
|
| Vol 53, No 2 (2019) |
Spectroscopy, Interaction with Radiation |
Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Laser Annealing of Thin ITO Films on Flexible Organic Substrates |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Structural, Optical, and Photosensitive Properties of PbS Films Deposited in the Presence of CaCl2 |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Technique for the Formation of Antireflection Coatings Based on ITO Films |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
|
| Vol 53, No 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electronic Excitation Energy Transfer in an Array of CdS Quantum Dots on a Quasi-Two-Dimensional Surface |
|
| Vol 53, No 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region |
|
| Vol 53, No 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
|
| Vol 53, No 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Silicon Nanopillar Microarrays: Formation and Resonance Reflection of Light |
|
| Vol 53, No 2 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga2Se3) Structures |
|
| Vol 53, No 2 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Praseodymium and Lanthanum Substitution for Bismuth on the Thermoelectric Properties of BiCuSeO Oxyselenides |
|
| Vol 53, No 2 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Thermoresistive Semiconductor SiC/Si Composite Material |
|
| Vol 53, No 2 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optical Properties of Polyethylene Filled with Bi2Te3 Nanocrystallites |
|
| Vol 53, No 2 (2019) |
Physics of Semiconductor Devices |
Features of MIS Structures with Samarium Fluoride on Silicon and Germanium Substrates |
|
| Vol 53, No 2 (2019) |
Physics of Semiconductor Devices |
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Anodic Oxidation of Hydrogen-Transferred Silicon-on-Insulator Layers |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Oxide Removal from the InSb Plate Surface to Produce Lateral Spin Valves |
|
| Vol 53, No 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile |
|
| Vol 53, No 3 (2019) |
Review |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
| Vol 53, No 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
|
| Vol 53, No 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
|
| Vol 53, No 3 (2019) |
Electronic Properties of Semiconductors |
Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals |
|
| Vol 53, No 3 (2019) |
Electronic Properties of Semiconductors |
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions |
|
| Vol 53, No 3 (2019) |
Spectroscopy, Interaction with Radiation |
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K |
|
| Vol 53, No 3 (2019) |
Surfaces, Interfaces, and Thin Films |
Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV |
|
| Vol 53, No 3 (2019) |
Surfaces, Interfaces, and Thin Films |
Mechanism and Features of Field Emission in Semiconductors |
|
| Vol 53, No 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons |
|
| Vol 53, No 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition |
|
| Vol 53, No 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells |
|
| Vol 53, No 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser |
|
| Vol 53, No 3 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires |
|
| Vol 53, No 3 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optical Properties of CdS Nanocrystals Doped with Zinc and Copper |
|
| Vol 53, No 3 (2019) |
Physics of Semiconductor Devices |
Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures |
|
| Vol 53, No 3 (2019) |
Physics of Semiconductor Devices |
EMF Induced in a p–n Junction under a Strong Microwave Field and Light |
|
| Vol 53, No 3 (2019) |
Physics of Semiconductor Devices |
Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures |
|
| Vol 53, No 3 (2019) |
Physics of Semiconductor Devices |
Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package) |
|
| Vol 53, No 3 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition |
|
| Vol 53, No 3 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of Nanoporous Copper-Silicide Films |
|
| Vol 53, No 3 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation |
|
| Vol 53, No 3 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches |
|
| Vol 53, No 4 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon |
|
| Vol 53, No 4 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
|
| Vol 53, No 4 (2019) |
Electronic Properties of Semiconductors |
Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths |
|
| Vol 53, No 4 (2019) |
Spectroscopy, Interaction with Radiation |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
|
| Vol 53, No 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing |
|
| Vol 53, No 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures |
|
| Vol 53, No 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Simulated Contrast of Two Dislocations |
|
| Vol 53, No 4 (2019) |
Surfaces, Interfaces, and Thin Films |
Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device |
|
| Vol 53, No 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films |
|
| Vol 53, No 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films |
|
| Vol 53, No 4 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Formation of Porous Silicon by Nanopowder Sintering |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities |
|
| Vol 53, No 4 (2019) |
Physics of Semiconductor Devices |
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes |
|
| Vol 53, No 4 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols |
|
| Vol 53, No 4 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon |
|
| Vol 53, No 4 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of In0.2Ce0.1Co4Sb12.3 Ribbons Prepared by the Rapid-Quenching Technique |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Thermoelectric Power of Bi1 –xSbx Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Miniature Thermoelectric Modules Developed for Cycling Applications |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
On the Band Structure of Bi2Te3 |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of n-Mg2(SiGe)0.8Sn0.2 Solid Solution |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Variation in the State of 119mSn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119mTe/119Sb Isotopes |
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| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Sb2Te3-Based Nanocomposites with Graphite |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Power of a Luttinger Liquid |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Topological Surface States of Dirac Fermions in n-Bi2Te3 –ySey Thermoelectrics |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Materials Based on Solid Solutions of Bismuth and Antimony Tellurides Formed by Rapid Melt Crystallization Methods |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Miniaturized Heat-Flux Sensor Based on a Glass-Insulated Bi–Sn Microwire |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Cobalt Monosilicide and Its Alloys |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Bi2 –xLuxTe2.7Se0.3 Solid Solutions |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Coefficient of the Performance of a Segmented Thermoelectric Cooling Leg |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Effective Bi–Sb Crystals for Thermoelectric Cooling at Temperatures of T ≲ 180 K |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Materials Based on Solid Solutions of Bismuth Chalcogenides of n-Type Conductivity Prepared by Melt Crystallization in a Liquid |
|
| Vol 53, No 5 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Setup for Measuring the Thermoelectric Properties of Ultrathin Wires |
|
| Vol 53, No 5 (2019) |
Electronic Properties of Semiconductors |
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |
|
| Vol 53, No 5 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates |
|
| Vol 53, No 5 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses |
|
| Vol 53, No 5 (2019) |
Carbon Systems |
Hydrogen Desorption from Pentagraphane |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Galvanomagnetic Properties of Cobalt Monosilicide and Alloys Based on It |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Properties of Nanocomposite Bi0.45Sb1.55Te2.985 Solid Solution with SiO2 Microparticles |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Cryogenic Thermoelectric Cooler for Operating Temperatures below 90 K |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric and Thermoelectrokinetic Phenomena in Colloidal Solutions |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Correlation of the Optical and Magnetic Properties of Bi2Te3–Sb2Te3 Crystals |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Influence of V Doping on the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si |
|
| Vol 53, No 6 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Structure and Thermoelectric Properties of CoSi-Based Film Composites |
|
| Vol 53, No 6 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy |
|
| Vol 53, No 6 (2019) |
Electronic Properties of Semiconductors |
Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory |
|
| Vol 53, No 6 (2019) |
Electronic Properties of Semiconductors |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
|
| Vol 53, No 6 (2019) |
Surfaces, Interfaces, and Thin Films |
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation |
|
| Vol 53, No 6 (2019) |
Surfaces, Interfaces, and Thin Films |
Features of Defect Formation in Nanostructured Silicon under Ion Irradiation |
|
| Vol 53, No 6 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities |
|
| Vol 53, No 6 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr3 Nanocrystals |
|
| Vol 53, No 6 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Urbach Rule in MnGa2Se4 Single Crystals Upon Optical Absorption |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers |
|
| Vol 53, No 6 (2019) |
Physics of Semiconductor Devices |
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation |
|
| Vol 53, No 6 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films |
|
| Vol 53, No 7 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
New Direction in the Application of Thermoelectric Energy Converters |
|
| Vol 53, No 7 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Theoretical Modeling of the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys |
|
| Vol 53, No 7 (2019) |
XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 |
Thermoelectric Intensifier of Heat Transfer between Two Moving Media with Different Temperatures |
|
| Vol 53, No 7 (2019) |
Electronic Properties of Semiconductors |
On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide |
|
| Vol 53, No 7 (2019) |
Electronic Properties of Semiconductors |
Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint |
|
| Vol 53, No 7 (2019) |
Electronic Properties of Semiconductors |
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium |
|
| Vol 53, No 7 (2019) |
Surfaces, Interfaces, and Thin Films |
On the Properties of Isoparametric AlInGaAsP/InP Heterostructures |
|
| Vol 53, No 7 (2019) |
Surfaces, Interfaces, and Thin Films |
Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions |
|
| Vol 53, No 7 (2019) |
Surfaces, Interfaces, and Thin Films |
Spherical Distributed Bragg Reflector with an Omnidirectional Stop Band in the Near-IR Spectral Range |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure |
|
| Vol 53, No 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers |
|
| Vol 53, No 7 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction |
|
| Vol 53, No 7 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Orientation Relationships upon the Structural Transformation of Monoclinic and Cubic Phases in Silver Sulfide |
|
| Vol 53, No 7 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation |
|
| Vol 53, No 7 (2019) |
Carbon Systems |
Epitaxial Carbyne: Analytical Results |
|
| Vol 53, No 7 (2019) |
Physics of Semiconductor Devices |
High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation |
|
| Vol 53, No 7 (2019) |
Physics of Semiconductor Devices |
High-Voltage Diffused Step Recovery Diodes: II. Theory |
|
| Vol 53, No 7 (2019) |
Physics of Semiconductor Devices |
Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons |
|
| Vol 53, No 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides |
|
| Vol 53, No 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Properties of Semipolar GaN Grown on a Si(100) Substrate |
|
| Vol 53, No 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
|
| Vol 53, No 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|
| Vol 53, No 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon |
|
| Vol 53, No 8 (2019) |
Electronic Properties of Semiconductors |
Spin–Orbit Interaction and Carrier Mobility in a Longitudinal InSb Autosoliton under a Magnetic Field |
|
| Vol 53, No 8 (2019) |
Electronic Properties of Semiconductors |
Effect of X-Ray Radiation on the Optical Properties of Photorefractive Bismuth-Silicate Crystals |
|
| Vol 53, No 8 (2019) |
Electronic Properties of Semiconductors |
Some Physical Properties of the New Intermetallic Compound NbCd2 |
|
| Vol 53, No 8 (2019) |
Surfaces, Interfaces, and Thin Films |
Nanostructured ITO/SiO2 Coatings |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Theory of Plasmon–Excitons: An Estimate of the Coupling Constant and the Optical Spectrum |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Dependence of the Spontaneous Luminescence Intensity in ZnO Nanorods on their Length |
|
| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Energy Expenditure Upon the Formation of the Elastically Stressed State in the Layers of a Step-Graded Metamorphic Buffer in a Heterostructure Grown on a (001) GaAs Substrate |
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| Vol 53, No 8 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Thermal Annealing on the Photovoltaic Properties of GaP/Si Heterostructures Fabricated by Plasma-Enhanced Atomic Layer Deposition |
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| Vol 53, No 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Synthesis and Photoluminescence and Cathodoluminescence Properties of CdSe, CdTe, PbS, InSb, and GaAs Colloidal Quantum Dots |
|
| Vol 53, No 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures |
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| Vol 53, No 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Relaxation, Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
|
| Vol 53, No 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate |
|
| Vol 53, No 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties |
|
| Vol 53, No 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Spin States of Electrons in a Double Quantum Dot in a Two-Dimensional Topological Insulator with Spin-Orbit Interaction |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |
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| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
2D Bragg Resonators Based on Planar Dielectric Waveguides (from Theory to Model-Based Testing) |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Features of the Simultaneous Generation of Low-Q and High-Q Modes in Heterolasers Based on Quantum Dots with a Long Incoherent Relaxation Time of Optical Dipole Oscillations |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Coherence Dynamics of the Exciton-Polariton System in GaAs Microcavities under Pulse Resonant Photoexcitation |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Interaction of a Tamm Plasmon and Exciton in an Organic Material in the Strong Coupling Mode |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
On the Two-Phonon Relaxation of Excited States of Boron Acceptors in Diamond |
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| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers |
|
| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors |
|
| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |
|
| Vol 53, No 10 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures |
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| Vol 53, No 10 (2019) |
Electronic Properties of Semiconductors |
Magnetosonic Waves in a Two-Dimensional Electron Fermi Liquid |
|
| Vol 53, No 10 (2019) |
Electronic Properties of Semiconductors |
Microwave Magnetic Absorption in HgSe with Co and Ni Impurities |
|
| Vol 53, No 10 (2019) |
Surfaces, Interfaces, and Thin Films |
Electronic States of Nanosystems Based on Cadmium Sulfide in the Zinc-Blende Form |
|
| Vol 53, No 10 (2019) |
Surfaces, Interfaces, and Thin Films |
Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process |
|
| Vol 53, No 10 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures |
|
| Vol 53, No 10 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles |
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| Vol 53, No 10 (2019) |
Carbon Systems |
Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers |
|
| Vol 53, No 10 (2019) |
Physics of Semiconductor Devices |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
|
| Vol 53, No 10 (2019) |
Physics of Semiconductor Devices |
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes |
|
| Vol 53, No 10 (2019) |
Erratum |
Erratum to: Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two-Dimensional Electron Gas |
|
| Vol 53, No 11 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN? |
|
| Vol 53, No 11 (2019) |
Electronic Properties of Semiconductors |
Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys |
|
| Vol 53, No 11 (2019) |
Spectroscopy, Interaction with Radiation |
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd3 –xMnxAs2 Films |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |
|
| Vol 53, No 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions |
|
| Vol 53, No 11 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality |
|
| Vol 53, No 11 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices |
|
| Vol 53, No 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System |
|
| Vol 53, No 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity |
|
| Vol 53, No 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Spectra of SmS Films in the Far- and Mid-Infrared Regions |
|
| Vol 53, No 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
|
| Vol 53, No 11 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy |
|
| Vol 53, No 11 (2019) |
Physics of Semiconductor Devices |
High-Voltage AlInGaN LED Chips |
|
| Vol 53, No 11 (2019) |
Physics of Semiconductor Devices |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
|
| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique |
|
| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |
|
| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates |
|
| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds |
|
| Vol 53, No 12 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy |
|
| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs |
|
| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures |
|
| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |
|
| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
|
| Vol 53, No 12 (2019) |
Electronic Properties of Semiconductors |
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals |
|
| Vol 53, No 12 (2019) |
Surfaces, Interfaces, and Thin Films |
Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films |
|
| Vol 53, No 12 (2019) |
Surfaces, Interfaces, and Thin Films |
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films |
|
| Vol 53, No 12 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors |
|
| Vol 53, No 12 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials |
|
| Vol 53, No 12 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors |
|
| Vol 53, No 12 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States |
|
| Vol 53, No 12 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States |
|
| Vol 53, No 12 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures |
|
| Vol 53, No 12 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix |
|
| Vol 53, No 12 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor |
|
| Vol 53, No 12 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2 |
|
| Vol 53, No 12 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb1 –xAgxS Solid Solutions |
|
| Vol 53, No 12 (2019) |
Carbon Systems |
Edge Doping in Graphene Devices on SiO2 Substrates |
|
| Vol 53, No 12 (2019) |
Carbon Systems |
Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement |
|
| Vol 53, No 12 (2019) |
Carbon Systems |
Modification of Carbon-Nanotube Wettability by Ion Irradiation |
|
| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges |
|
| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
|
| Vol 53, No 12 (2019) |
Physics of Semiconductor Devices |
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |
|
| Vol 53, No 12 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method |
|
| Vol 53, No 12 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers |
|
| Vol 53, No 12 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
InxAl1 –xN Solid Solutions: Composition Stability Issues |
|
| Vol 53, No 13 (2019) |
Electronic Properties of Semiconductors |
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys |
|
| Vol 53, No 13 (2019) |
Electronic Properties of Semiconductors |
Electron Mobility Calculation of Diluted III–V-Nitrides Alloys |
|
| Vol 53, No 13 (2019) |
Spectroscopy, Interaction with Radiation |
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process |
|
| Vol 53, No 13 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Microstructure and Optical Bandgap of Cobalt Selenide Nanofilms |
|
| Vol 53, No 13 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Diameter Dependent Electronic, Optical and Transport Properties of CdSe Nanowire: Ab-Initio Study |
|
| Vol 53, No 13 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mg-Doped ZnO and Zn-Doped MgO Semiconductor Nanoparticles; Synthesis and Catalytic, Optical and Electro-Optical Characterization |
|
| Vol 53, No 13 (2019) |
Physics of Semiconductor Devices |
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications |
|
| Vol 53, No 13 (2019) |
Physics of Semiconductor Devices |
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells |
|
| Vol 53, No 13 (2019) |
Physics of Semiconductor Devices |
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation |
|
| Vol 53, No 13 (2019) |
Physics of Semiconductor Devices |
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs |
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| Vol 53, No 13 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Towards the Use of Cu–S Based Synthetic Minerals for Thermoelectric Applications |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Contacting Cu Electrodes to Mg2Si0.3Sn0.7: Direct vs. Indirect Resistive Heating |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Hardness and Fracture Toughness of Solid Solutions of Mg2Si and Mg2Sn |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Magnetoresistance of Polycrystalline Ytterbium at Low Temperatures |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds |
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| Vol 53, No 13 (2019) |
Thermoelectrics and Their Applications |
Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride |
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| Vol 53, No 14 (2019) |
2d Electron Gas |
Topological Electronic States on the Surface of a Strained Gapless Semiconductor |
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| Vol 53, No 14 (2019) |
2d Electron Gas |
Plasmons in Infinite 2D Electron System Screened by the Disk-Shaped Metallic Gate |
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| Vol 53, No 14 (2019) |
2d Electron Gas |
Microwave Absorption by Axisymmetric Plasmon Mode in 2D Electron Disk |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Spontaneous Emission in the Anti-Waveguiding VCSEL |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Luminescent Sensing via Photonic Nanojets |
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| Vol 53, No 14 (2019) |
Lasers and Optoelectronic Devices |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
A New Algorithm for Measuring the Young’s Modulus of Suspended Nanoobjects by the Bending-Based Test Method of Atomic Force Microscopy |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Ab Initio Study of Absorption Resonance Correlations between Nanotubes and Nanoribbons of Graphene and Hexagonal Boron Nitride |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Temperature Dependences of the Hysteresis Optical Properties of CdS-LDPE Polymer Nanocomposites |
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| Vol 53, No 14 (2019) |
Nanostructures Characterization |
Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Fullerene for the Improvement of PbS QDs-Based Hybrid Solar Cells |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Synthesis, Structural and Spectral Properties of Surface Noble Metal Nanostructures for Fiber-Optic Photoacoustic Generation |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Magnetoimpedance Effect in a SOI-Based Structure |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
High Directivity in the Narrow Band of Spherical Dielectric Antennas in GHz and THz Ranges |
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| Vol 53, No 14 (2019) |
Nanostructure Devices |
Monopolar Resistive Switching in Diamond-Like Carbon Films |
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| Vol 53, No 15 (2019) |
Basic Research |
Influence of Holes Capture Efficiency on Photoluminescence Temperature Dependence of n-AlGaAs/GaAs Quantum-Well Structures |
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| Vol 53, No 15 (2019) |
Basic Research |
Determination of the Bulk Conductivity of III–V Semiconductors in a Strong Constant Electric Field and under Harmonic Effects |
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| Vol 53, No 15 (2019) |
Electronics Materials |
State of the Surface of Polycrystalline Silver after Exposure to Activated Oxygen |
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| Vol 53, No 15 (2019) |
Electronics Materials |
Electron Microscopy Study of Silver Nanoparticles Obtained by Thermal Evaporation |
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| Vol 53, No 15 (2019) |
Electronics Materials |
Dependence of the Surface Morphology and Structure of CuIn0.95Ga0.05Se2 Films on the Selenization Temperature |
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| Vol 53, No 15 (2019) |
Electronics Materials |
Optical Properties of Composite Materials Based on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-Phenylenevinylene] and Titanium Dioxide in the Mid-IR Spectral Range |
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| Vol 53, No 15 (2019) |
Technological Processes and Routes |
Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources |
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| Vol 53, No 15 (2019) |
Technological Processes and Routes |
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds |
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| Vol 53, No 15 (2019) |
Technological Processes and Routes |
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC |
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| Vol 53, No 15 (2019) |
Technological Processes and Routes |
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques |
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| Vol 53, No 15 (2019) |
Technological Processes and Routes |
Study of the Formation Process of Memristor Structures Based on Copper Sulfide |
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| Vol 53, No 15 (2019) |
Elements of Integrated Electronics |
Precession of Magnetization of a Spin-Valve Free Layer and Its Switching under the Effect of a Magnetic Field Perpendicular to the Anisotropy Axis |
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| Vol 53, No 15 (2019) |
Elements of Integrated Electronics |
Field-Emission Cathodes Based on Microchannel Plates |
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| Vol 53, No 15 (2019) |
Elements of Integrated Electronics |
Investigation of the Temperature Effect on the Output Parameters of Radioisotope Sources of Electricity Based on Double Energy Conversion of Radiative Decay |
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| Vol 53, No 16 (2019) |
Excitons in Nanostructures |
The Indirect Excitons Contribution to the Polarizability of a Dielectric Nanoparticle |
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| Vol 53, No 16 (2019) |
Excitons in Nanostructures |
An Estimate for the Nonradiative Linewidths of the Quasibound Electron-Hole Pairs in Narrow Quantum Wells |
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| Vol 53, No 16 (2019) |
Excitons in Nanostructures |
Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential |
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| Vol 53, No 16 (2019) |
Excitons in Nanostructures |
Two Dimensional Bright and Dark Magnetoexcitons Interacting with Quantum Point Vortices |
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| Vol 53, No 16 (2019) |
Excitons in Nanostructures |
Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Synthesis and Comparison of the Electrical Properties of Polyaniline and Poly[(N-2-hydroxyethyl)aniline] |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Quartz |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Selective Epitaxy of Submicron GaN Structures |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam |
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| Vol 53, No 16 (2019) |
Nanostructures Technology |
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Influence of Impurities on Polarization Properties of Lattice Vibrations |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Electronic States in Cylindrical Core-Multi-Shell Nanowire |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Observation of Intralayer and Interlayer Excitons in Monolayered WSe2/WS2 Heterostructure |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Probability Density Operator and Darwin Term in ID Spinless Semi-Relativistic System |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Enhanced Photocatalytic Activity of ZnS:Mn2+ Quantum Dots |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Electronic and Optical Properties of Perovskite Quantum-Dot Dimer |
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| Vol 53, No 16 (2019) |
Quantum Wells and Quantum Dots |
Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies |
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