CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
- Authors: Varavin V.S.1, Vasilyev V.V.1, Guzev A.A.1, Dvoretsky S.A.1, Kovchavtsev A.P.1, Marin D.V.1, Sabinina I.V.1, Sidorov Y.G.1, Sidorov G.Y.1, Tsarenko A.V.1, Yakushev M.V.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 50, No 12 (2016)
- Pages: 1626-1629
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198893
- DOI: https://doi.org/10.1134/S1063782616120265
- ID: 198893
Cite item
Abstract
The parameters of multilayer CdxHg1–xTe heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p+–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 1015 cm–3. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n+–p-type diodes.
About the authors
V. S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. V. Vasilyev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. A. Guzev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. P. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. V. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. V. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
G. Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. V. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: yakushev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090