Email this article Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure
- Authors: Tregulov V.V.1, Litvinov V.G.2, Ermachikhin A.V.2
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Affiliations:
- Ryazan State University named for S. Yesenin
- Ryazan State Radio Engineering University
- Issue: Vol 52, No 7 (2018)
- Pages: 891-896
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203669
- DOI: https://doi.org/10.1134/S1063782618070242
- ID: 203669
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Abstract
The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/por-Si/p-Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por-Si/p-Si heterojunction, carrier tunneling in the por-Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.
About the authors
V. V. Tregulov
Ryazan State University named for S. Yesenin
Author for correspondence.
Email: trww@yandex.ru
Russian Federation, Ryazan, 390000
V. G. Litvinov
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Russian Federation, Ryazan, 390005
A. V. Ermachikhin
Ryazan State Radio Engineering University
Email: trww@yandex.ru
Russian Federation, Ryazan, 390005
