Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures
- Authors: Goldman E.I.1, Levashov S.A.1, Chucheva G.V.1
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Affiliations:
- Kotel’nikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
- Issue: Vol 53, No 4 (2019)
- Pages: 465-468
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205949
- DOI: https://doi.org/10.1134/S1063782619040109
- ID: 205949
Cite item
Abstract
Results of studying the features of the current–voltage (I–V) and capacitance–voltage characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures are presented. It turns out that the total recharging of localized electron states and minority carriers concentrated near the substrate–insulator interface, which occurs with a variation in the field voltage, is an order of magnitude higher than that of samples susceptible to damage by the field stress effect. The tunneling I–V characteristic is significantly asymmetric; notably, the current flowing from the field electrode into the silicon substrate is several orders of magnitude lower when compared with the current flowing from silicon to polysilicon at identical external voltages dropping across the insulating layer. To explain this asymmetry, it is assumed that a potential barrier in the transition layer from polysilicon to oxide, which separates the semiconductor electrode and substrate, has a height of ~1 eV and therefore always hinders electrical transport; for reverse currents, this barrier stops limiting the conductivity as soon as the tunneling level becomes higher than it.
About the authors
E. I. Goldman
Kotel’nikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190
S. A. Levashov
Kotel’nikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190
G. V. Chucheva
Kotel’nikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Author for correspondence.
Email: gvc@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190