Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography
- Authors: Borisov V.I.1, Kuvshinova N.A.1, Kurochka S.P.2, Sizov V.E.1, Stepushkin M.V.1,2, Temiryazev A.G.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- National University of Science and Technology “MISiS”
- Issue: Vol 51, No 11 (2017)
- Pages: 1481-1484
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201702
- DOI: https://doi.org/10.1134/S1063782617110082
- ID: 201702
Cite item
Abstract
Quasi-one-dimensional semiconductor structures with a variable longitudinal potential profile are fabricated by pulse power nanolithography, which is carried out using an atomic force microscope. Structures are fabricated on the basis of AlGaAs/GaAs heterostructures with a deep (130 nm from the surface) twodimensional electron gas. The channel potential profile is formed with the help of sectioned in-plane gates formed on both channel sides. The electrical parameters of the structures measured at temperatures down to 1.5 K confirmed the efficiency of the applied method to fabricate insulating regions with lateral sizes of ~10 nm.
About the authors
V. I. Borisov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Author for correspondence.
Email: vbi@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190
N. A. Kuvshinova
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: vbi@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190
S. P. Kurochka
National University of Science and Technology “MISiS”
Email: vbi@ms.ire.rssi.ru
Russian Federation, Moscow, 119049
V. E. Sizov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: vbi@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190
M. V. Stepushkin
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch); National University of Science and Technology “MISiS”
Email: vbi@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190; Moscow, 119049
A. G. Temiryazev
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: vbi@ms.ire.rssi.ru
Russian Federation, Fryazino, Moscow oblast, 141190