Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

Abstract

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)_1–x(AlN)_x structures. The results of calculations are compared to experimental data.