New Method of Porous Ge Layer Fabrication: Structure and Optical Properties
- Authors: Gorokhov E.B.1, Astankova K.N.1, Azarov I.A.1,2, Volodin V.A.1,2, Latyshev A.V.1,2
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Affiliations:
- Institute of Semiconductor Physics SB Russian Academy of Sciences
- Novosibirsk State University
- Issue: Vol 52, No 5 (2018)
- Pages: 628-631
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203231
- DOI: https://doi.org/10.1134/S1063782618050111
- ID: 203231
Cite item
Abstract
Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2
About the authors
E. B. Gorokhov
Institute of Semiconductor Physics SB Russian Academy of Sciences
Author for correspondence.
Email: gorokhov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. N. Astankova
Institute of Semiconductor Physics SB Russian Academy of Sciences
Email: gorokhov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. A. Azarov
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. A. Volodin
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. V. Latyshev
Institute of Semiconductor Physics SB Russian Academy of Sciences; Novosibirsk State University
Email: gorokhov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090