Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase
- Authors: Alpatov A.V.1, Vikhrov S.P.1, Kazanskii A.G.2, Lyaskovskii V.L.3,4, Rybin N.B.1, Rybina N.V.1, Forsh P.A.2
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Affiliations:
- Ryazan State Radio-Engineering University
- Moscow State University
- All-Russia Research Institute for Optical and Physical Measurements
- Moscow Institute of Electronics and Mathematics
- Issue: Vol 50, No 5 (2016)
- Pages: 590-595
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/197063
- DOI: https://doi.org/10.1134/S1063782616050031
- ID: 197063
Cite item
Abstract
The correlation properties of the structure of nc-Si/a-Si:H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in the nc-Si/a-Si:H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the a-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the nc-Si/a-Si:H film structure increased with an increase in the nanocrystal fraction in the films.
About the authors
A. V. Alpatov
Ryazan State Radio-Engineering University
Author for correspondence.
Email: pgnv@mail.ru
Russian Federation, Ryazan, 390005
S. P. Vikhrov
Ryazan State Radio-Engineering University
Email: pgnv@mail.ru
Russian Federation, Ryazan, 390005
A. G. Kazanskii
Moscow State University
Email: pgnv@mail.ru
Russian Federation, Moscow, 119991
V. L. Lyaskovskii
All-Russia Research Institute for Optical and Physical Measurements; Moscow Institute of Electronics and Mathematics
Email: pgnv@mail.ru
Russian Federation, Moscow, 119361; Moscow, 109028
N. B. Rybin
Ryazan State Radio-Engineering University
Email: pgnv@mail.ru
Russian Federation, Ryazan, 390005
N. V. Rybina
Ryazan State Radio-Engineering University
Email: pgnv@mail.ru
Russian Federation, Ryazan, 390005
P. A. Forsh
Moscow State University
Email: pgnv@mail.ru
Russian Federation, Moscow, 119991