Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles

Abstract

The temperature dependences of the capacitance–voltage characteristics and deep-level spectra of a Au–n-Si:Au–Si–p-Si heterostructure based on a composite layer of Au and Si nanoparticles are investigated. The structure manifests the properties of a transistor connected to a circuit with a common emitter with a disconnected base and an emitter Schottky barrier between the Au point contact and the n–(Si:Au) layer. Nanoparticles in this layer form finite clusters with hopping conductivity; herewith, charge accumulation is observed in the region of the Au point contact. The system at a measurement temperature below 180 K transitions from the finite-cluster phase to the infinite-cluster phase due to the percolation effect. This phase manifests metallic properties in the lateral plane of the heterostructure, which transforms into a p–n diode.