Email this article Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well
- Authors: Dikareva N.V.1, Zvonkov B.N.1, Vikhrova O.V.1, Nekorkin S.M.1, Aleshkin V.Y.1,2, Dubinov A.A.1,2
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Affiliations:
- Physical–Technical Research Institute
- Institute of Physics of Microstructures
- Issue: Vol 51, No 10 (2017)
- Pages: 1360-1363
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201410
- DOI: https://doi.org/10.1134/S1063782617100086
- ID: 201410
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Abstract
The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.
About the authors
N. V. Dikareva
Physical–Technical Research Institute
Author for correspondence.
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
B. N. Zvonkov
Physical–Technical Research Institute
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
O. V. Vikhrova
Physical–Technical Research Institute
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
S. M. Nekorkin
Physical–Technical Research Institute
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950
V. Ya. Aleshkin
Physical–Technical Research Institute; Institute of Physics of Microstructures
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. A. Dubinov
Physical–Technical Research Institute; Institute of Physics of Microstructures
Email: dnat@ro.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
