Email this article Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
- Authors: Puzanov A.S.1, Obolenskiy S.V.1, Kozlov V.A.1,2
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Institute for Physics of Microstructures
- Issue: Vol 50, No 12 (2016)
- Pages: 1678-1683
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/199120
- DOI: https://doi.org/10.1134/S1063782616120162
- ID: 199120
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Abstract
We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.
About the authors
A. S. Puzanov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolenskiy
Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. A. Kozlov
Lobachevsky State University of Nizhny Novgorod (NNSU); Institute for Physics of Microstructures
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
