Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates
- Authors: Kozlovskiy V.I.1,2, Krivobok V.S.1,2, Kuznetsov P.I.3, Nikolaev S.N.3, Onistchenko E.E.3, Pruchkina A.A.3, Temiryazev A.G.3
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Affiliations:
- Lebedev Physical Institute
- National Research Nuclear University MEPHI (Moscow Engineering Physics Institute)
- Kotel’nikov Institute of Radio-Engineering and Electronics
- Issue: Vol 50, No 5 (2016)
- Pages: 688-693
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197165
- DOI: https://doi.org/10.1134/S1063782616050146
- ID: 197165
Cite item
Abstract
Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 108 to 109 cm–2 are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H2 atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.
Keywords
About the authors
V. I. Kozlovskiy
Lebedev Physical Institute; National Research Nuclear University MEPHI (Moscow Engineering Physics Institute)
Email: krivobok@lebedev.ru
Russian Federation, Moscow, 119991; Moscow, 115409
V. S. Krivobok
Lebedev Physical Institute; National Research Nuclear University MEPHI (Moscow Engineering Physics Institute)
Author for correspondence.
Email: krivobok@lebedev.ru
Russian Federation, Moscow, 119991; Moscow, 115409
P. I. Kuznetsov
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
Russian Federation, Fryazino, Moscow oblast, 141120
S. N. Nikolaev
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
Russian Federation, Fryazino, Moscow oblast, 141120
E. E. Onistchenko
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
Russian Federation, Fryazino, Moscow oblast, 141120
A. A. Pruchkina
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
Russian Federation, Fryazino, Moscow oblast, 141120
A. G. Temiryazev
Kotel’nikov Institute of Radio-Engineering and Electronics
Email: krivobok@lebedev.ru
Russian Federation, Fryazino, Moscow oblast, 141120