Email this article On the photon annealing of silicon-implanted gallium-nitride layers
- Authors: Seleznev B.I.1, Moskalev G.Y.2, Fedorov D.G.1,2
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Affiliations:
- Novgorod State University
- OKB-Planeta, Inc.
- Issue: Vol 50, No 6 (2016)
- Pages: 832-838
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197319
- DOI: https://doi.org/10.1134/S1063782616060221
- ID: 197319
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Abstract
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
About the authors
B. I. Seleznev
Novgorod State University
Author for correspondence.
Email: Boris.Seleznev@novsu.ru
Russian Federation, Velikii Novgorod, 173004
G. Ya. Moskalev
OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
Russian Federation, Velikii Novgorod, 173004
D. G. Fedorov
Novgorod State University; OKB-Planeta, Inc.
Email: Boris.Seleznev@novsu.ru
Russian Federation, Velikii Novgorod, 173004; Velikii Novgorod, 173004
