Email this article Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions
- Authors: Parkhomenko H.P.1, Solovan M.N.1, Mostovyi A.I.1, Ulyanytsky K.S.1, Maryanchuk P.D.1
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Affiliations:
- Fedkovich Chernivtsi National University
- Issue: Vol 51, No 3 (2017)
- Pages: 344-348
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199594
- DOI: https://doi.org/10.1134/S1063782617030216
- ID: 199594
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Abstract
The I–V characteristics of NiO/CdTe heterostructures fabricated by reactive magnetron sputtering are measured at different temperatures. It is established that current transport through the NiO/CdTe heterojunction is mainly controlled via generation–recombination and tunneling under forward bias and via tunneling under reverse bias. The investigated heterostructures generate an open-circuit voltage of Voc = 0.26 V and a short-circuit current density of Isc = 58.7 μA/cm2 at an illumination intensity of 80 mW/cm2.
About the authors
H. P. Parkhomenko
Fedkovich Chernivtsi National University
Author for correspondence.
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
M. N. Solovan
Fedkovich Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
A. I. Mostovyi
Fedkovich Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
K. S. Ulyanytsky
Fedkovich Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
P. D. Maryanchuk
Fedkovich Chernivtsi National University
Email: h.parkhomenko@chnu.edu.ua
Ukraine, Chernivtsi, 58012
