De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States


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Abstract

The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.

About the authors

V. V. Romanov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251

V. A. Kozhevnikov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251

C. T. Tracey

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251

N. T. Bagraev

Peter the Great St. Petersburg Polytechnic University; Ioffe Institute

Author for correspondence.
Email: Bagraev@mail.ru
Russian Federation, St. Petersburg, 195251; St. Petersburg, 194021


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