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De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States


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Resumo

The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.

Sobre autores

V. Romanov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251

V. Kozhevnikov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251

C. Tracey

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251

N. Bagraev

Peter the Great St. Petersburg Polytechnic University; Ioffe Institute

Autor responsável pela correspondência
Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251; St. Petersburg, 194021

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