Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides
- Authors: Pankratova D.S.1, Novitskii A.P.1, Kuskov K.V.1, Sergienko I.A.1, Leybo D.V.1, Burkov A.T.2, Konstantinov P.P.2, Khovaylo V.V.1
-
Affiliations:
- National University of Science and Technology MISIS
- Ioffe Institute
- Issue: Vol 53, No 5 (2019)
- Pages: 624-627
- Section: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206060
- DOI: https://doi.org/10.1134/S1063782619050221
- ID: 206060
Cite item
Abstract
The transport properties of p-type oxyselenides with the chemical composition Bi1 –xLaxCuSeO (x = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La3+ for Bi3+ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.
About the authors
D. S. Pankratova
National University of Science and Technology MISIS
Author for correspondence.
Email: d.pankratova@misis.ru
Russian Federation, Moscow, 119049
A. P. Novitskii
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Russian Federation, Moscow, 119049
K. V. Kuskov
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Russian Federation, Moscow, 119049
I. A. Sergienko
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Russian Federation, Moscow, 119049
D. V. Leybo
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Russian Federation, Moscow, 119049
A. T. Burkov
Ioffe Institute
Email: d.pankratova@misis.ru
Russian Federation, St. Petersburg, 194021
P. P. Konstantinov
Ioffe Institute
Email: d.pankratova@misis.ru
Russian Federation, St. Petersburg, 194021
V. V. Khovaylo
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Russian Federation, Moscow, 119049