Influence of measurement temperature on the luminescence properties of (113) defects in oxygen-implanted silicon
- Authors: Sobolev N.A.1, Kalyadin A.E.1, Shek E.I.1, Shtel’makh K.F.1,2
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Affiliations:
- Ioffe Institute
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 51, No 9 (2017)
- Pages: 1133-1135
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/201103
- DOI: https://doi.org/10.1134/S1063782617090202
- ID: 201103
Cite item
Abstract
Influence of the measurement temperature in the range 5–130 K on the photoluminescence spectra of (113) defects in Si implanted with 350-keV oxygen ions at doses of 3.7 × 1014 cm–2 and annealed at a temperature of 700°C for 1 h in a chlorine-containing atmosphere is studied. The temperature dependence of the line intensity is characterized by portions of intensity increase with an activation energy of 23.1 meV and intensity quenching with activation energies of 41.9 and 178.3 meV. With increasing temperature, the lines are shifted to longer wavelengths and their FWHM increases.
About the authors
N. A. Sobolev
Ioffe Institute
Author for correspondence.
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. E. Kalyadin
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
E. I. Shek
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
K. F. Shtel’makh
Ioffe Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251