Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy
- Authors: Seredin P.V.1, Goloshchapov D.L.1, Zolotukhin D.S.1, Lenshin A.S.1, Lukin A.N.1, Khudyakov Y.Y.1, Arsentyev I.N.2, Zhabotinsky A.V.2, Nikolaev D.N.2, Pikhtin N.A.2
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Affiliations:
- Voronezh State University
- Ioffe Institute
- Issue: Vol 52, No 8 (2018)
- Pages: 1012-1021
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203830
- DOI: https://doi.org/10.1134/S1063782618080195
- ID: 203830
Cite item
Abstract
It is shown for the first time that the structural and optical functional characteristics of integrated GaAs/Si(100) heterostructures can be controlled by using misoriented Si(100) substrates and their preliminary etching. The growth of an epitaxial GaAs layer on a Si substrate without the formation of antiphase domains can be carried out on a substrate deviated from the (100) singular plane by an angle smaller than 4°–6° or without a transition layer of GaAs nanocolumns. Preliminary treatment of the silicon substrate by etching makes it possible to use it for the vapor-phase epitaxial growth of a single-crystal GaAs film with a considerably smaller relaxation coefficient, which has a positive effect on the structural quality of the film. These data are in good agreement with the results of IR reflectance spectroscopy and photoluminescence and ultraviolet spectroscopy. The features of the optical properties of integrated GaAs/Si(100) heterostructures in the infrared and ultraviolet spectral regions are also defined by the relaxation coefficient.
About the authors
P. V. Seredin
Voronezh State University
Author for correspondence.
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
D. L. Goloshchapov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
D. S. Zolotukhin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. S. Lenshin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. N. Lukin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
Yu. Yu. Khudyakov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
I. N. Arsentyev
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
A. V. Zhabotinsky
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
D. N. Nikolaev
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
N. A. Pikhtin
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021