Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method
- Authors: El Ouchdi A.A.1,2, Bouazza B.1, Belhadji Y.1,3, Massoum N.1
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Affiliations:
- Research Unit of Materials and Renewable Energies
- Division of Microelectronics and Nanotechnologies
- Electrical and Engineering Department, Faculty of Applied Sciences
- Issue: Vol 51, No 12 (2017)
- Pages: 1588-1591
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/202010
- DOI: https://doi.org/10.1134/S1063782617120053
- ID: 202010
Cite item
Abstract
This work addresses the issue related to the electronic transport in the III–V ternary material Ga0.5ln0.5Sb using Monte Carlo method. We investigated the electronic motion in the three valleys Γ, L, and X of the conduction band. These three valleys are isotropic, non-parabolic and centred on the first Brillouin zone. In our study, we included scatterings with ionised impurities, acoustic and polar optical phonons, as well as, intervalley and intravalley interactions. We discussed the electronic transport characteristics at the stationary and the transient regimes in function of temperature and electric field.
About the authors
A. A. El Ouchdi
Research Unit of Materials and Renewable Energies; Division of Microelectronics and Nanotechnologies
Author for correspondence.
Email: elouchdi.amine@gmail.com
Algeria, Tlemcen; Algiers
B. Bouazza
Research Unit of Materials and Renewable Energies
Email: elouchdi.amine@gmail.com
Algeria, Tlemcen
Y. Belhadji
Research Unit of Materials and Renewable Energies; Electrical and Engineering Department, Faculty of Applied Sciences
Email: elouchdi.amine@gmail.com
Algeria, Tlemcen; Tiaret
N. Massoum
Research Unit of Materials and Renewable Energies
Email: elouchdi.amine@gmail.com
Algeria, Tlemcen