Email this article Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity
- Authors: Derebezov I.A.1,2, Gaisler V.A.1,3, Gaisler A.V.1, Dmitriev D.V.1, Toropov A.I.1, Fischbach S.4, Schlehahn A.4, Kaganskiy A.4, Heindel T.4, Bounouar S.4, Rodt S.4, Reitzenstein S.4
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Affiliations:
- Institute of Semiconductor Physics, Siberian Branch
- Siberian State University of Telecommunications and Information Science
- Novosibirsk State Technical University
- Technische Universität Berlin
- Issue: Vol 51, No 11 (2017)
- Pages: 1399-1402
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201461
- DOI: https://doi.org/10.1134/S1063782617110100
- ID: 201461
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Abstract
The results of numerical modeling and investigation of a hybrid microcavity based on a semiconductor Bragg reflector and a microlens selectively positioned above a single (111) In(Ga)As quantum dot are presented. Emitters based on the hybrid microcavity demonstrate the effective pumping of a single quantum dot and high emission output efficiency. The microcavity design can be used to implement emitters of polarization- entangled photon pairs based on single semiconductor quantum dots.
About the authors
I. A. Derebezov
Institute of Semiconductor Physics, Siberian Branch; Siberian State University of Telecommunications and Information Science
Author for correspondence.
Email: derebezov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630102
V. A. Gaisler
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Email: derebezov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
A. V. Gaisler
Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. V. Dmitriev
Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. I. Toropov
Institute of Semiconductor Physics, Siberian Branch
Email: derebezov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
S. Fischbach
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
A. Schlehahn
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
A. Kaganskiy
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
T. Heindel
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
S. Bounouar
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
S. Rodt
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
S. Reitzenstein
Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Germany, Berlin, D-10623
