Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation

Abstract

The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 10¹¹ cm^–2, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.”