Email this article Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si
- Authors: Teplyakov M.P.1, Ken O.S.2, Goryachev D.N.2, Sreseli O.M.2
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Issue: Vol 52, No 9 (2018)
- Pages: 1193-1197
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204065
- DOI: https://doi.org/10.1134/S106378261809021X
- ID: 204065
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Abstract
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
About the authors
M. P. Teplyakov
Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: twarm@mail.ru
Russian Federation, St. Petersburg, 195251
O. S. Ken
Ioffe Institute
Email: twarm@mail.ru
Russian Federation, St. Petersburg, 194021
D. N. Goryachev
Ioffe Institute
Email: twarm@mail.ru
Russian Federation, St. Petersburg, 194021
O. M. Sreseli
Ioffe Institute
Email: twarm@mail.ru
Russian Federation, St. Petersburg, 194021
