Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
- Authors: Kulagina M.M.1, Kuzmenkov A.G.2, Nevedomskii V.N.1, Guseva Y.A.1, Maleev S.N.1, Ladenkov I.V.3, Fefelova E.L.3, Fefelov A.G.3, Ustinov V.M.2,4, Maleev N.A.1, Belyakov V.A.3, Vasil’ev A.P.3, Bobrov M.A.1, Blokhin S.A.1
-
Affiliations:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- JSC “Salyut”
- Peter the Great Saint-Petersburg Polytechnic University
- Issue: Vol 51, No 11 (2017)
- Pages: 1431-1434
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201511
- DOI: https://doi.org/10.1134/S1063782617110185
- ID: 201511
Cite item
Abstract
The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.
About the authors
M. M. Kulagina
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. G. Kuzmenkov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
V. N. Nevedomskii
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Guseva
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Maleev
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Ladenkov
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Larina 7, Nizhny Novgorod, 603950
E. L. Fefelova
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Larina 7, Nizhny Novgorod, 603950
A. G. Fefelov
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Larina 7, Nizhny Novgorod, 603950
V. M. Ustinov
Submicron Heterostructures for Microelectronics Research and Engineering Center; Peter the Great Saint-Petersburg Polytechnic University
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021; ul. Politekhnicheskaya 29, St. Petersburg, 195251
N. A. Maleev
Ioffe Institute
Author for correspondence.
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Belyakov
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Larina 7, Nizhny Novgorod, 603950
A. P. Vasil’ev
JSC “Salyut”
Email: maleev@beam.ioffe.ru
Russian Federation, ul. Larina 7, Nizhny Novgorod, 603950
M. A. Bobrov
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Blokhin
Ioffe Institute
Email: maleev@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021