Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics
- Authors: Shimanskii A.F.1, Pavlyuk T.O.2, Kopytkova S.A.2, Filatov R.A.1, Gorodishcheva A.N.3
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Affiliations:
- Siberian Federal University
- Germanium Joint-stock company
- Reshetnev Siberian State Aerospace University
- Issue: Vol 52, No 2 (2018)
- Pages: 264-267
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202495
- DOI: https://doi.org/10.1134/S1063782618020161
- ID: 202495
Cite item
Abstract
Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction of silicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals.
About the authors
A. F. Shimanskii
Siberian Federal University
Author for correspondence.
Email: shimanaf@mail.ru
Russian Federation, Krasnoyarsk, 660047
T. O. Pavlyuk
Germanium Joint-stock company
Email: shimanaf@mail.ru
Russian Federation, Krasnoyarsk, 660027
S. A. Kopytkova
Germanium Joint-stock company
Email: shimanaf@mail.ru
Russian Federation, Krasnoyarsk, 660027
R. A. Filatov
Siberian Federal University
Email: shimanaf@mail.ru
Russian Federation, Krasnoyarsk, 660047
A. N. Gorodishcheva
Reshetnev Siberian State Aerospace University
Email: shimanaf@mail.ru
Russian Federation, Krasnoyarsk, 660037