Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
- Authors: Lundin W.V.1, Tsatsulnikov A.F.2, Rodin S.N.1, Sakharov A.V.1, Usov S.O.2, Mitrofanov M.I.1,2, Levitskii I.V.1,2, Evtikhiev V.P.1
-
Affiliations:
- Ioffe Institute
- Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences
- Issue: Vol 52, No 10 (2018)
- Pages: 1357-1362
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204223
- DOI: https://doi.org/10.1134/S106378261810007X
- ID: 204223
Cite item
Abstract
The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si3N4 layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si3N4 mask on the character of selective epitaxy is studied.
About the authors
W. V. Lundin
Ioffe Institute
Author for correspondence.
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. F. Tsatsulnikov
Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Institute
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Institute
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. O. Usov
Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. I. Mitrofanov
Ioffe Institute; Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
I. V. Levitskii
Ioffe Institute; Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
V. P. Evtikhiev
Ioffe Institute
Email: Lundin@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021