Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y
- Authors: Romaka V.A.1,2, Rogl P.3, Romaka V.V.2, Kaczorowski D.4, Krayovskyy V.Y.2, Stadnyk Y.V.5, Horyn A.M.5
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Affiliations:
- Pidstryhach Institute for Applied Problems of Mechanics and Mathematics
- National University “Lvivska Politechnika”
- Institut für Physikalische Chemie
- Institute of Low Temperature and Structure Research
- Ivan Franko Lviv National University
- Issue: Vol 51, No 2 (2017)
- Pages: 139-145
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199397
- DOI: https://doi.org/10.1134/S106378261702018X
- ID: 199397
Cite item
Abstract
The crystalline and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with Y acceptor impurity are studied in the ranges: T = 80–400 K, NAY ≈ 1.9 × 1020–5.7 × 1021 cm–3 (x = 0.01–0.30), and H ≤ 10 kG. The nature of the mechanism of structural defect generation is determined, which leads to a change in the band gap and the degree of semiconductor compensation, the essence of which is the simultaneous reduction and elimination of structural donor-type defects as a result of the displacement of ~1% of Ni atoms from the Hf (4a) site, and the generation of structural acceptor-type defects by substituting Hf atoms with Y atoms at the 4a site. The results of calculations of the electronic structure of Hf1–xYxNiSn are in agreement with the experimental data. The discussion is performed within the Shklovskii–Efros model of a heavily doped and compensated semiconductor.
About the authors
V. A. Romaka
Pidstryhach Institute for Applied Problems of Mechanics and Mathematics; National University “Lvivska Politechnika”
Author for correspondence.
Email: vromaka@polynet.lviv.ua
Ukraine, vul. Naukova 3b, Lviv, 79060; vul. S. Bandera 12, Lviv, 79013
P. Rogl
Institut für Physikalische Chemie
Email: vromaka@polynet.lviv.ua
Austria, Währingerstraße 42, Wien, A-1090
V. V. Romaka
National University “Lvivska Politechnika”
Email: vromaka@polynet.lviv.ua
Ukraine, vul. S. Bandera 12, Lviv, 79013
D. Kaczorowski
Institute of Low Temperature and Structure Research
Email: vromaka@polynet.lviv.ua
Poland, ulica Okolna 2, Wroclaw, 50-950
V. Ya. Krayovskyy
National University “Lvivska Politechnika”
Email: vromaka@polynet.lviv.ua
Ukraine, vul. S. Bandera 12, Lviv, 79013
Yu. V. Stadnyk
Ivan Franko Lviv National University
Email: vromaka@polynet.lviv.ua
Ukraine, vul. Kyryla i Mefodiya 6, Lviv, 79005
A. M. Horyn
Ivan Franko Lviv National University
Email: vromaka@polynet.lviv.ua
Ukraine, vul. Kyryla i Mefodiya 6, Lviv, 79005