Edge Doping in Graphene Devices on SiO2 Substrates
- Authors: Vasilyeva G.Y.1, Smirnov D.2, Vasilyev Y.B.1, Greshnov A.A.1, Haug R.J.2
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Affiliations:
- Ioffe Institute
- Institut für Festkórperphysik, Lebniz Universitat Hannover
- Issue: Vol 53, No 12 (2019)
- Pages: 1672-1676
- Section: Carbon Systems
- URL: https://journals.rcsi.science/1063-7826/article/view/207400
- DOI: https://doi.org/10.1134/S1063782619160292
- ID: 207400
Cite item
Abstract
The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
Keywords
About the authors
G. Yu. Vasilyeva
Ioffe Institute
Email: a_greshnov@hotmail.ru
Russian Federation, St. Petersburg, 194021
D. Smirnov
Institut für Festkórperphysik, Lebniz Universitat Hannover
Email: a_greshnov@hotmail.ru
Germany, Hannover, D-30167
Yu. B. Vasilyev
Ioffe Institute
Email: a_greshnov@hotmail.ru
Russian Federation, St. Petersburg, 194021
A. A. Greshnov
Ioffe Institute
Author for correspondence.
Email: a_greshnov@hotmail.ru
Russian Federation, St. Petersburg, 194021
R. J. Haug
Institut für Festkórperphysik, Lebniz Universitat Hannover
Email: a_greshnov@hotmail.ru
Germany, Hannover, D-30167