Email this article Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells
- Authors: Chen X.1, Zhao B.2, Li S.2
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Affiliations:
- School of Physics and Optoelectronic Engineering, Xidian University
- Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University
- Issue: Vol 53, No 13 (2019)
- Pages: 1792-1796
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207461
- DOI: https://doi.org/10.1134/S1063782619130049
- ID: 207461
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Abstract
The performance of InGaN/GaN multiple quantum well (MQW) solar cells with five different Si-doping concentrations, namely 0, 4 × 1017 cm–3, 1 × 1018 cm–3, 3 × 1018 cm–3 and 6 × 1018 cm–3, in GaN barriers is investigated. Increasing Si-doping concentration leads to better transport property, resulting in smaller series resistance (Rs). However, the crystal quality degrades when Si-doping concentration is over 1 × 1018 cm–3, which reduces the external quantum efficiency, short circuit current density and open circuit voltage. As a result, the sample with a slight Si-doping concentration of 4 × 1017 cm–3 exhibits the highest conversion efficiency.
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About the authors
Xin Chen
School of Physics and Optoelectronic Engineering, Xidian University
Author for correspondence.
Email: xin.chen@xidian.edu.cn
China, Xi’an, 710071
Bijun Zhao
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University
Email: xin.chen@xidian.edu.cn
China, Guangzhou, 510631
Shuti Li
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology,South China Normal University
Email: xin.chen@xidian.edu.cn
China, Guangzhou, 510631
