Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium
- Authors: Imenkov A.N.1, Grebenshchikova E.A.1, Shutaev V.A.1,2, Ospennikov A.M.3, Sherstnev V.V.1, Yakovlev Y.P.1
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg State Polytechnical University
- Russian Institute of Radionavigation and Time
- Issue: Vol 50, No 7 (2016)
- Pages: 929-934
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197451
- DOI: https://doi.org/10.1134/S1063782616070058
- ID: 197451
Cite item
Abstract
Pd–oxide–InP (MOS) structures are fabricated, and their physical and photoelectric properties in a hydrogen atmosphere are investigated. It is established that a decrease in photovoltage of the structure and a large increase in photocurrent in the circuit are observed under the pulsed effect of hydrogen on the structure with a palladium layer illuminated by a light-emitting diode (LED of the wavelength λ = 0.9 μm). The kinetics and mechanism of the variation in the photovoltage and photocurrent are considered. It is assumed that the photovoltage decreases because of the ionization of hydrogen atoms in the Pd layer, and the photocurrent increases due to the thermionic emission of nonequilibrium electrons from the Pd layer into the semiconductor. On the basis of results of the investigations, the sensitive element for an optoelectronic hydrogen sensor is developed.
About the authors
A. N. Imenkov
Ioffe Physical–Technical Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. A. Grebenshchikova
Ioffe Physical–Technical Institute
Author for correspondence.
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Shutaev
Ioffe Physical–Technical Institute; St. Petersburg State Polytechnical University
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
A. M. Ospennikov
Russian Institute of Radionavigation and Time
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 191124
V. V. Sherstnev
Ioffe Physical–Technical Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. P. Yakovlev
Ioffe Physical–Technical Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021