Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures
- Authors: Musaev A.M.1
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Issue: Vol 50, No 10 (2016)
- Pages: 1352-1355
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198072
- DOI: https://doi.org/10.1134/S1063782616100171
- ID: 198072
Cite item
Abstract
A possible mechanism for natural-microplasma turn-off in silicon p–n junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.
About the authors
A. M. Musaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: akhmed-musaev@yandex.ru
Russian Federation, ul. Yaragskogo 94, Makhachkala, 367003