Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
- Authors: Cherkova S.G.1, Skuratov V.A.2,3,4, Volodin V.A.1,5
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Affiliations:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Joint Institute for Nuclear Research
- National Research Nuclear University “MEPhI”
- Dubna State University
- Novosibirsk State University
- Issue: Vol 53, No 11 (2019)
- Pages: 1427-1430
- Section: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/207260
- DOI: https://doi.org/10.1134/S1063782619110046
- ID: 207260
Cite item
Abstract
The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
Keywords
About the authors
S. G. Cherkova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: cherkova@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. A. Skuratov
Joint Institute for Nuclear Research; National Research Nuclear University “MEPhI”; Dubna State University
Email: cherkova@isp.nsc.ru
Russian Federation, Dubna, Moscow region, 141980; Moscow, 115409; Dubna, Moscow region, 141982
V. A. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: cherkova@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090