On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel
- Authors: Ivanov P.A.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 1 (2018)
- Pages: 100-104
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202290
- DOI: https://doi.org/10.1134/S1063782618010104
- ID: 202290
Cite item
Abstract
The problem of the spatial localization of free electrons in 4H-SiC metal—oxide—semiconductor field effect transistors (MOSFETS) with an accumulation- and inversion-type n channel is theoretically analyzed. The analysis demonstrates that, in optimally designed accumulation transistors (ACCUFETs), the average distance from the surface, at which free electrons are localized, may be an order of magnitude larger than that in inversion MOSFETs. This can make 4H-SiC ACCUFETs advantageous as regards the effective carrier mobility in a conducting channel.
About the authors
P. A. Ivanov
Ioffe Institute
Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021