Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode

Abstract

p⁺–n₀–n⁺ 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm². It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10^–2 Ω cm²), the electron drift velocity in the n₀ base at electric fields higher than 10⁶ V/cm (7.8 × 10⁶ cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10^–4 K^–1).