Effect of Electron Irradiation with an Energy of 0.9 MeV on the IV Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes


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Аннотация

It is established experimentally that noticeable changes in the IV characteristics and low-frequency noise in 4H-SiC pin diodes irradiated by electrons with an energy of 0.9 MeV are observed after doses of Φ ≥ 1.4 × 1015 cm–2. The currents in the forward and reverse branches of the IV characteristics vary nonmonotonically at voltages lower than 2 V with increasing dose, which is explained by the interaction between the excited electronic subsystem and metastable defects. In this case, a steady increase in the ideality factor and the series resistance of diodes in the region of exponential growth of the IV characteristics at voltages exceeding 2 V is observed. The reliable operation of microwave devices with low-noise 4H-SiC pin diodes under conditions of electron irradiation is possible up to a cumulative dose of Φ ≤ 1015 cm–2. In microwave devices, the level of low-frequency noise in which is irrelevant but the stabile regime of parameters is of importance, the dose can be increased to Φ ≈ 8 × 1015 cm–2.

Авторлар туралы

V. Dobrov

JSC “Svetlana-Electronpribor“

Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 194156

V. Kozlovski

Peter the Great St.Petersburg Polytechnic University

Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 195251

A. Mescheryakov

Peter the Great St.Petersburg Polytechnic University

Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 195251

V. Usychenko

JSC “Svetlana-Electronpribor“; Peter the Great St.Petersburg Polytechnic University

Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 194156; St. Petersburg, 195251

A. Chernova

JSC “Svetlana-Electronpribor“; Peter the Great St.Petersburg Polytechnic University

Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 194156; St. Petersburg, 195251

E. Shabunina

Ioffe Institute

Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 194021

N. Shmidt

Ioffe Institute

Хат алмасуға жауапты Автор.
Email: Natalia.Shmidt@mail.ioffe.ru
Ресей, St. Petersburg, 194021

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