Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes
- Authors: Dobrov V.A.1, Kozlovski V.V.2, Mescheryakov A.V.2, Usychenko V.G.1,2, Chernova A.S.1,2, Shabunina E.I.3, Shmidt N.M.3
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Affiliations:
- JSC “Svetlana-Electronpribor“
- Peter the Great St.Petersburg Polytechnic University
- Ioffe Institute
- Issue: Vol 53, No 4 (2019)
- Pages: 545-551
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206003
- DOI: https://doi.org/10.1134/S1063782619040080
- ID: 206003
Cite item
Abstract
It is established experimentally that noticeable changes in the I–V characteristics and low-frequency noise in 4H-SiC pin diodes irradiated by electrons with an energy of 0.9 MeV are observed after doses of Φ ≥ 1.4 × 1015 cm–2. The currents in the forward and reverse branches of the I–V characteristics vary nonmonotonically at voltages lower than 2 V with increasing dose, which is explained by the interaction between the excited electronic subsystem and metastable defects. In this case, a steady increase in the ideality factor and the series resistance of diodes in the region of exponential growth of the I–V characteristics at voltages exceeding 2 V is observed. The reliable operation of microwave devices with low-noise 4H-SiC pin diodes under conditions of electron irradiation is possible up to a cumulative dose of Φ ≤ 1015 cm–2. In microwave devices, the level of low-frequency noise in which is irrelevant but the stabile regime of parameters is of importance, the dose can be increased to Φ ≈ 8 × 1015 cm–2.
About the authors
V. A. Dobrov
JSC “Svetlana-Electronpribor“
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194156
V. V. Kozlovski
Peter the Great St.Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. V. Mescheryakov
Peter the Great St.Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
V. G. Usychenko
JSC “Svetlana-Electronpribor“; Peter the Great St.Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194156; St. Petersburg, 195251
A. S. Chernova
JSC “Svetlana-Electronpribor“; Peter the Great St.Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194156; St. Petersburg, 195251
E. I. Shabunina
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. M. Shmidt
Ioffe Institute
Author for correspondence.
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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