Email this article Formation of graphite/sic structures by the thermal decomposition of silicon carbide
- Authors: Mynbaeva M.G.1,2, Lavrent’ev A.A.1, Mynbaev K.D.1,2
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- Issue: Vol 50, No 1 (2016)
- Pages: 138-142
- Section: Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/196721
- DOI: https://doi.org/10.1134/S1063782616010176
- ID: 196721
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Abstract
The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.
About the authors
M. G. Mynbaeva
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Author for correspondence.
Email: mgm@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
A. A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: mgm@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
K. D. Mynbaev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: mgm@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
