Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications
- Authors: Maache M.1, Devers T.2, Chala A.1
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Affiliations:
- Department of Science of Matter
- ICMN, IUT Chartres
- Issue: Vol 51, No 12 (2017)
- Pages: 1604-1610
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/202026
- DOI: https://doi.org/10.1134/S1063782617120132
- ID: 202026
Cite item
Abstract
Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.
About the authors
M. Maache
Department of Science of Matter
Author for correspondence.
Email: moumos2001@gmail.com
Algeria, Djelfa, 17000
T. Devers
ICMN, IUT Chartres
Email: moumos2001@gmail.com
France, Chartres, 28000
A. Chala
Department of Science of Matter
Email: moumos2001@gmail.com
Algeria, Biskra, 07000