Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
- 作者: Mnatsakanov T.T.1, Tandoev A.G.1, Levinshtein M.E.2, Yurkov S.N.1, Palmour J.W.3
-
隶属关系:
- All-Russia Electrotechnical Institute
- Ioffe Institute
- Wolfspeed
- 期: 卷 51, 编号 8 (2017)
- 页面: 1081-1086
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201027
- DOI: https://doi.org/10.1134/S1063782617080231
- ID: 201027
如何引用文章
详细
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
作者简介
T. Mnatsakanov
All-Russia Electrotechnical Institute
编辑信件的主要联系方式.
Email: mnatt@yandex.ru
俄罗斯联邦, Moscow, 111250
A. Tandoev
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
俄罗斯联邦, Moscow, 111250
M. Levinshtein
Ioffe Institute
Email: mnatt@yandex.ru
俄罗斯联邦, St. Petersburg, 194021
S. Yurkov
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
俄罗斯联邦, Moscow, 111250
J. Palmour
Wolfspeed
Email: mnatt@yandex.ru
美国, 3026 East Cornwallis Rd., Research Triangle Park, New York, NC, 27709
补充文件
