Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
- Authors: Mnatsakanov T.T.1, Tandoev A.G.1, Levinshtein M.E.2, Yurkov S.N.1, Palmour J.W.3
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Affiliations:
- All-Russia Electrotechnical Institute
- Ioffe Institute
- Wolfspeed
- Issue: Vol 51, No 8 (2017)
- Pages: 1081-1086
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201027
- DOI: https://doi.org/10.1134/S1063782617080231
- ID: 201027
Cite item
Abstract
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
About the authors
T. T. Mnatsakanov
All-Russia Electrotechnical Institute
Author for correspondence.
Email: mnatt@yandex.ru
Russian Federation, Moscow, 111250
A. G. Tandoev
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
Russian Federation, Moscow, 111250
M. E. Levinshtein
Ioffe Institute
Email: mnatt@yandex.ru
Russian Federation, St. Petersburg, 194021
S. N. Yurkov
All-Russia Electrotechnical Institute
Email: mnatt@yandex.ru
Russian Federation, Moscow, 111250
J. W. Palmour
Wolfspeed
Email: mnatt@yandex.ru
United States, 3026 East Cornwallis Rd., Research Triangle Park, New York, NC, 27709