Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures


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Аннотация

The possibility of identifying DNA oligonucleotides deposited onto the region of the edge channels of silicon nanostructures is considered. The role of various THz (terahertz) radiation harmonics of silicon nanostructures in the resonance response of oligonucleotides is analyzed. In particular, this makes it possible to compare single-stranded 100_ and 50_mer DNA oligonucleotides. A technique for the rapid identification of different oligonucleotides by measuring changes in the conductance and transverse potential difference of silicon nanostructures with microcavities, embedded in the edge channels for selecting THz radiation characteristics, is proposed.

Авторлар туралы

N. Bagraev

Peter the Great Saint-Petersburg Polytechnic University; Ioffe Physical–Technical Institute

Хат алмасуға жауапты Автор.
Email: bagraev@mail.ioffe.ru
Ресей, ul. Polytekhnicheskaya 29, St. Petersburg, 195251; ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Chernev

Saint Petersburg Academic University—Nanotechnology Research and Education Center

Email: bagraev@mail.ioffe.ru
Ресей, ul. Khlopina 8/3, St. Petersburg, 194021

L. Klyachkin

Ioffe Physical–Technical Institute

Email: bagraev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Malyarenko

Ioffe Physical–Technical Institute

Email: bagraev@mail.ioffe.ru
Ресей, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. Emel’yanov

Saint Petersburg Academic University—Nanotechnology Research and Education Center

Email: bagraev@mail.ioffe.ru
Ресей, ul. Khlopina 8/3, St. Petersburg, 194021

M. Dubina

Saint Petersburg Academic University—Nanotechnology Research and Education Center

Email: bagraev@mail.ioffe.ru
Ресей, ul. Khlopina 8/3, St. Petersburg, 194021

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© Pleiades Publishing, Ltd., 2016