Email this article Investigation of the Dielectric Permittivity and Electrical Conductivity of Ce2S3
- Authors: Zalessky V.G.1, Kaminski V.V.1, Hirai S.2, Kubota Y.2, Sharenkova N.V.1
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Affiliations:
- Ioffe Institute
- Muroran Institute of Technology
- Issue: Vol 52, No 4 (2018)
- Pages: 411-413
- Section: Article
- URL: https://journals.rcsi.science/1063-7826/article/view/202702
- DOI: https://doi.org/10.1134/S1063782618040322
- ID: 202702
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Abstract
The rare-earth semiconductor β-Ce2S3 compound samples were synthesized and their dielectric permittivity and electrical conductivity were measured in the temperature range 90–400 K. The energy-band structure has been determined. It is shown that the long-known large electrical parameter spread of semiconductor compounds close in composition to Ce2S3 is explained by the structure of impurity donor levels formed by cerium atoms and ions with different ionization degrees.
About the authors
V. G. Zalessky
Ioffe Institute
Email: Vladimir.Kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Kaminski
Ioffe Institute
Author for correspondence.
Email: Vladimir.Kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. Hirai
Muroran Institute of Technology
Email: Vladimir.Kaminski@mail.ioffe.ru
Japan, Muroran, Hokkaido, 050-8585
Y. Kubota
Muroran Institute of Technology
Email: Vladimir.Kaminski@mail.ioffe.ru
Japan, Muroran, Hokkaido, 050-8585
N. V. Sharenkova
Ioffe Institute
Email: Vladimir.Kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
