Impurity levels in Hg3In2Te6 crystals

Abstract

The parameters of impurity levels in Hg₃In₂Te₆ samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy E_F(T). The dependences n(T) and E_F(T) are obtained from data on the Hall coefficient R(T) and the thermopower α(T). Differential analysis of the dependences n(T) shows that, under variations in the degree of compensation by heat treatment of the samples, a wider spectrum of impurity levels in the band gap of Hg₃In₂Te₆ can be analyzed.