Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3


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The Shubnikov–de Haas effect and the Hall effect in n-Bi2–xTlxSe3 (x = 0, 0.01, 0.02, 0.04) and p-Sb2–xTlxTe3 (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi2–xTlxSe3 and increases the electron mobility. In p-Sb2–xTlxTe3, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, is discussed.

作者简介

A. Kudryashov

Faculty of Physics

Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991

V. Kytin

Faculty of Physics

Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991

R. Lunin

Faculty of Physics

Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991

V. Kulbachinskii

Faculty of Physics; National Research Nuclear University “MEPhI”

编辑信件的主要联系方式.
Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409

A. Banerjee

Department of Physics

Email: kulb@mig.phys.msu.ru
印度, 92 A P C Road, Kolkata, 700009

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