Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3
- Authors: Kudryashov A.A.1, Kytin V.G.1, Lunin R.A.1, Kulbachinskii V.A.1,2, Banerjee A.3
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Affiliations:
- Faculty of Physics
- National Research Nuclear University “MEPhI”
- Department of Physics
- Issue: Vol 50, No 7 (2016)
- Pages: 869-875
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197358
- DOI: https://doi.org/10.1134/S1063782616070113
- ID: 197358
Cite item
Abstract
The Shubnikov–de Haas effect and the Hall effect in n-Bi2–xTlxSe3 (x = 0, 0.01, 0.02, 0.04) and p-Sb2–xTlxTe3 (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi2–xTlxSe3 and increases the electron mobility. In p-Sb2–xTlxTe3, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, is discussed.
About the authors
A. A. Kudryashov
Faculty of Physics
Email: kulb@mig.phys.msu.ru
Russian Federation, Moscow, 119991
V. G. Kytin
Faculty of Physics
Email: kulb@mig.phys.msu.ru
Russian Federation, Moscow, 119991
R. A. Lunin
Faculty of Physics
Email: kulb@mig.phys.msu.ru
Russian Federation, Moscow, 119991
V. A. Kulbachinskii
Faculty of Physics; National Research Nuclear University “MEPhI”
Author for correspondence.
Email: kulb@mig.phys.msu.ru
Russian Federation, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
A. Banerjee
Department of Physics
Email: kulb@mig.phys.msu.ru
India, 92 A P C Road, Kolkata, 700009