Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3
- 作者: Kudryashov A.A.1, Kytin V.G.1, Lunin R.A.1, Kulbachinskii V.A.1,2, Banerjee A.3
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隶属关系:
- Faculty of Physics
- National Research Nuclear University “MEPhI”
- Department of Physics
- 期: 卷 50, 编号 7 (2016)
- 页面: 869-875
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197358
- DOI: https://doi.org/10.1134/S1063782616070113
- ID: 197358
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详细
The Shubnikov–de Haas effect and the Hall effect in n-Bi2–xTlxSe3 (x = 0, 0.01, 0.02, 0.04) and p-Sb2–xTlxTe3 (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi2–xTlxSe3 and increases the electron mobility. In p-Sb2–xTlxTe3, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, is discussed.
作者简介
A. Kudryashov
Faculty of Physics
Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991
V. Kytin
Faculty of Physics
Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991
R. Lunin
Faculty of Physics
Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991
V. Kulbachinskii
Faculty of Physics; National Research Nuclear University “MEPhI”
编辑信件的主要联系方式.
Email: kulb@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991; Kashirskoe sh. 31, Moscow, 115409
A. Banerjee
Department of Physics
Email: kulb@mig.phys.msu.ru
印度, 92 A P C Road, Kolkata, 700009
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