Optical properties of hybrid quantum-confined structures with high absorbance
- Authors: Nadtochiy A.M.1,2,3, Kalyuzhnyy N.A.1,3, Mintairov S.A.1,2,3, Payusov A.S.1,3, Rouvimov S.S.4, Maximov M.V.1,2,3, Zhukov A.E.1,3
-
Affiliations:
- St. Petersburg Academic University
- Solar Dots Ltd.
- Ioffe Institute
- University of Notre Dame
- Issue: Vol 50, No 9 (2016)
- Pages: 1180-1185
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197846
- DOI: https://doi.org/10.1134/S1063782616090189
- ID: 197846
Cite item
Abstract
The methods of photoluminescence and photoconductivity spectroscopy and the spectroscopy of photocurrent of a p–i–n structure are used to study samples with hybrid quantum-confined medium “quantum well–dots” (QWD) structures grown on GaAs substrates. The significant contribution of QWD states, which extends the GaAs absorption range to 1075 nm, is found in the photoconductivity and photocurrent spectra. The absorption and luminescence of the quantum-confined structures possess characteristic features of quantum wells. Analysis of the photocurrent and photoconductivity spectra demonstrate that the excitation of carriers from localized QWD states has a combined nature: at temperatures lower than 100 K and an electric-field strength of below 40 kV/cm, excitation is possible via tunneling to the matrix, while at higher temperatures thermal activation coming into play. Also, lateral photoconductivity is observed in the layers of quantum-confined structures.
About the authors
A. M. Nadtochiy
St. Petersburg Academic University; Solar Dots Ltd.; Ioffe Institute
Author for correspondence.
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 194021
N. A. Kalyuzhnyy
St. Petersburg Academic University; Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
S. A. Mintairov
St. Petersburg Academic University; Solar Dots Ltd.; Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 194021
A. S. Payusov
St. Petersburg Academic University; Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
S. S. Rouvimov
University of Notre Dame
Email: al.nadtochy@mail.ioffe.ru
United States, Notre Dame, IN, 46556
M. V. Maximov
St. Petersburg Academic University; Solar Dots Ltd.; Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 194021
A. E. Zhukov
St. Petersburg Academic University; Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021