Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films
- Authors: Sitnikov A.V.1, Zhilova O.V.1, Babkina I.V.1, Makagonov V.A.1, Kalinin Y.E.1, Remizova O.I.1
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Affiliations:
- Voronezh State Technical University
- Issue: Vol 52, No 9 (2018)
- Pages: 1118-1122
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/203980
- DOI: https://doi.org/10.1134/S106378261809018X
- ID: 203980
Cite item
Abstract
Thin Zr-stabilized SnO2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn2O3. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.
About the authors
A. V. Sitnikov
Voronezh State Technical University
Email: zhilova105@mail.ru
Russian Federation, Voronezh, 394026
O. V. Zhilova
Voronezh State Technical University
Author for correspondence.
Email: zhilova105@mail.ru
Russian Federation, Voronezh, 394026
I. V. Babkina
Voronezh State Technical University
Email: zhilova105@mail.ru
Russian Federation, Voronezh, 394026
V. A. Makagonov
Voronezh State Technical University
Email: zhilova105@mail.ru
Russian Federation, Voronezh, 394026
Yu. E. Kalinin
Voronezh State Technical University
Email: zhilova105@mail.ru
Russian Federation, Voronezh, 394026
O. I. Remizova
Voronezh State Technical University
Email: zhilova105@mail.ru
Russian Federation, Voronezh, 394026