Low-Frequency Dielectric Relaxation in Iron-Doped Ge 28.5 Pb 15 S 56.5  Glassy System

R. A. Castro; G. I. Grabko; A. A. Kononov

doi:10.1134/S1063782618090051

Low-Frequency Dielectric Relaxation in Iron-Doped Ge_28.5Pb₁₅S_56.5 Glassy System

Authors: Castro R.A.¹, Grabko G.I.², Kononov A.A.¹
Affiliations:
1. Herzen State Pedagogical University of Russia
2. Transbaikal State University
Issue: Vol 52, No 9 (2018)
Pages: 1160-1162
Section: Amorphous, Vitreous, and Organic Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/204032
DOI: https://doi.org/10.1134/S1063782618090051
ID: 204032

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Abstract
About the authors
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Abstract

The dielectric relaxation processes in Ge_28.5Pb₁₅S_56.5 glassy system are investigated. The introduction of an iron impurity into a glass matrix is shown to sharply increase the permittivity ε' and decrease the dissipation factor tanδ. The found regularities are explained within the cluster structure (two-phase) model of doped glass.

Keywords

Glassy Systems, Dissipation Factor Tanδ, Doped Glasses, Iron Impurities, Dipole Polarization Relaxation

About the authors

R. A. Castro

Herzen State Pedagogical University of Russia

Author for correspondence.
Email: recastro@mail.ru
Russian Federation, St. Petersburg, 191186

G. I. Grabko

Transbaikal State University

Email: recastro@mail.ru
Russian Federation, Chita, 672039

A. A. Kononov