DLTS Investigation of the Energy Spectrum of Si:Mg Crystals
- Authors: Yarykin N.1, Shuman V.B.2, Portsel L.M.2, Lodygin A.N.2, Astrov Y.A.2, Abrosimov N.V.3, Weber J.4
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Affiliations:
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
- Ioffe Institute
- Leibniz Institute for Crystal Growth
- Technische Universitat Dresden
- Issue: Vol 53, No 6 (2019)
- Pages: 789-794
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/206328
- DOI: https://doi.org/10.1134/S1063782619060290
- ID: 206328
Cite item
Abstract
Electrically active centers in n-type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100°C. It is found that two levels with a similar concentration of ~6 × 1014 cm–3 dominate in the DLTS spectrum; the value approximately corresponds to the interstitial magnesium (Mgi) concentration expected from diffusion conditions and published data on the Hall effect. The dependence of the electron emission rate from these levels on the electric-field strength agrees qualitatively with the Poole–Frenkel effect, which indicates the donor nature of both levels, although the absolute value of the effect differs from theoretical value. The activation energies of these levels found by the extrapolation of emission rates measured at various temperatures to zero field are 112 and 252 meV, which coincides within the accuracy with energies of ground states of the first and second donor levels of Mg determined previously from optical absorption. Thus, it is shown that when using high-quality initial material and the selected diffusion mode, interstitial magnesium atoms are the dominant centers with levels in the upper half of the band gap.
About the authors
N. Yarykin
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: yuri.astrov@mail.ioffe.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
V. B. Shuman
Ioffe Institute
Email: yuri.astrov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
L. M. Portsel
Ioffe Institute
Email: yuri.astrov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Lodygin
Ioffe Institute
Email: yuri.astrov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. A. Astrov
Ioffe Institute
Author for correspondence.
Email: yuri.astrov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Abrosimov
Leibniz Institute for Crystal Growth
Email: yuri.astrov@mail.ioffe.ru
Germany, Berlin, D-12489
J. Weber
Technische Universitat Dresden
Email: yuri.astrov@mail.ioffe.ru
Germany, Dresden, D-01062