Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al2O3 of different thicknesses
- Authors: Valeev R.G.1, Trigub A.L.1,2, Chukavin A.I.1, Beltiukov A.N.1
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Affiliations:
- Physical-Technical Institute, Russian Academy of Sciences (Ural Branch)
- National Research Center “Kurchatov Institute”
- Issue: Vol 51, No 2 (2017)
- Pages: 207-212
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199465
- DOI: https://doi.org/10.1134/S1063782617020221
- ID: 199465
Cite item
Abstract
We present EXAFS, XANES, and X-ray diffraction data on nanoscale ZnS:Cu (5 at %) structures fabricated by the thermal deposition of a ZnS and Cu powder mixture in porous anodic alumina matrices with a pore diameter of 80 nm and thicknesses of 1, 3, and 5 μm. The results obtained are compared with data on ZnS:Cu films deposited onto a polycor surface. According to X-ray diffraction data, the samples contain copper and zinc compounds with sulfur (Cu2S and ZnS, respectively); the ZnS compound is in the cubic (sphalerite) and hexagonal (wurtzite) modifications. EXAFS and XANES studies at the K absorption edges of zinc and copper showed that, in samples deposited onto polycor and alumina with thicknesses of 3 and 5 μm, most copper atoms form the Cu2S compound, while, in the sample deposited onto a 1-μm-thick alumina layer, copper atoms form metallic particles on the sample surface. Copper crystals affect the Zn–S interatomic distance in the sample with a 1-μm-thick porous Al2O3 layer; this distance is smaller than in the other samples.
About the authors
R. G. Valeev
Physical-Technical Institute, Russian Academy of Sciences (Ural Branch)
Author for correspondence.
Email: rishatvaleev@mail.ru
Russian Federation, Izhevsk, 426000
A. L. Trigub
Physical-Technical Institute, Russian Academy of Sciences (Ural Branch); National Research Center “Kurchatov Institute”
Email: rishatvaleev@mail.ru
Russian Federation, Izhevsk, 426000; Moscow, 123182
A. I. Chukavin
Physical-Technical Institute, Russian Academy of Sciences (Ural Branch)
Email: rishatvaleev@mail.ru
Russian Federation, Izhevsk, 426000
A. N. Beltiukov
Physical-Technical Institute, Russian Academy of Sciences (Ural Branch)
Email: rishatvaleev@mail.ru
Russian Federation, Izhevsk, 426000