Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE
- Authors: Khvostikov V.P.1, Sorokina S.V.1, Potapovich N.S.1, Khvostikova O.A.1, Timoshina N.K.1, Shvarts M.Z.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 3 (2018)
- Pages: 366-370
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202639
- DOI: https://doi.org/10.1134/S1063782618030120
- ID: 202639
Cite item
Abstract
Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al0.07GaAs–p-Al0.07GaAs–p-Al0.25GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm2 at a power of 1.2 W. At S = 10.2 mm2 the efficiency is 58.3% at a laser power of 0.7 W.
About the authors
V. P. Khvostikov
Ioffe Institute
Author for correspondence.
Email: vlkh@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Sorokina
Ioffe Institute
Email: vlkh@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. S. Potapovich
Ioffe Institute
Email: vlkh@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. A. Khvostikova
Ioffe Institute
Email: vlkh@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. Kh. Timoshina
Ioffe Institute
Email: vlkh@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. Z. Shvarts
Ioffe Institute
Email: vlkh@scell.ioffe.ru
Russian Federation, St. Petersburg, 194021