Email this article Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs
- Authors: Volkov V.V.1, Kogan L.M.2, Turkin A.N.1, Yunovich A.E.1
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Affiliations:
- Moscow State University
- Scientific-and-Production Center “Optel”
- Issue: Vol 52, No 10 (2018)
- Pages: 1293-1297
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204145
- DOI: https://doi.org/10.1134/S1063782618100226
- ID: 204145
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Abstract
The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).
About the authors
V. V. Volkov
Moscow State University
Email: andrey@turkin.su
Russian Federation, Moscow, 119991
L. M. Kogan
Scientific-and-Production Center “Optel”
Email: andrey@turkin.su
Russian Federation, Moscow, 105187
A. N. Turkin
Moscow State University
Author for correspondence.
Email: andrey@turkin.su
Russian Federation, Moscow, 119991
A. E. Yunovich
Moscow State University
Email: andrey@turkin.su
Russian Federation, Moscow, 119991
