Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs
- Authors: Volkov V.V.1, Kogan L.M.2, Turkin A.N.1, Yunovich A.E.1
- 
							Affiliations: 
							- Moscow State University
- Scientific-and-Production Center “Optel”
 
- Issue: Vol 52, No 10 (2018)
- Pages: 1293-1297
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204145
- DOI: https://doi.org/10.1134/S1063782618100226
- ID: 204145
Cite item
Abstract
The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).
About the authors
V. V. Volkov
Moscow State University
														Email: andrey@turkin.su
				                					                																			                												                	Russian Federation, 							Moscow, 119991						
L. M. Kogan
Scientific-and-Production Center “Optel”
														Email: andrey@turkin.su
				                					                																			                												                	Russian Federation, 							Moscow, 105187						
A. N. Turkin
Moscow State University
							Author for correspondence.
							Email: andrey@turkin.su
				                					                																			                												                	Russian Federation, 							Moscow, 119991						
A. E. Yunovich
Moscow State University
														Email: andrey@turkin.su
				                					                																			                												                	Russian Federation, 							Moscow, 119991						
Supplementary files
 
				
			 
					 
						 
						 
						 
						 
				 
  
  
  
  
  Email this article
			Email this article  Open Access
		                                Open Access Access granted
						Access granted Subscription Access
		                                		                                        Subscription Access
		                                					