Lifetime of excess electrons in Cu–Zn–Sn–Se powders
- Authors: Novikov G.F.1, Gapanovich M.V.1, Gremenok V.F.2, Bocharov K.V.1, Tsai W.-.3, Jeng M.3, Chang L.3
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Affiliations:
- Institute of Problems in Chemical Physics
- Scientific and Practical Center for Materials Science
- Department of Electronic Engineering
- Issue: Vol 51, No 1 (2017)
- Pages: 18-22
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199280
- DOI: https://doi.org/10.1134/S1063782617010171
- ID: 199280
Cite item
Abstract
The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to Ea ~ 0.054 eV.
About the authors
G. F. Novikov
Institute of Problems in Chemical Physics
Author for correspondence.
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
M. V. Gapanovich
Institute of Problems in Chemical Physics
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
V. F. Gremenok
Scientific and Practical Center for Materials Science
Email: ngf@icp.ac.ru
Belarus, Minsk, 220072
K. V. Bocharov
Institute of Problems in Chemical Physics
Email: ngf@icp.ac.ru
Russian Federation, Chernogolovka, 142432
W. -T. Tsai
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Taiwan, Province of China, Taoyuan
Ming-Jer Jeng
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Taiwan, Province of China, Taoyuan
Liann-Be Chang
Department of Electronic Engineering
Email: ngf@icp.ac.ru
Taiwan, Province of China, Taoyuan