Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

S. M. Nekorkin; B. N. Zvonkov; N. V. Baidus; N. V. Dikareva; O. V. Vikhrova; A. A. Afonenko; D. V. Ushakov

doi:10.1134/S1063782617010158

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

Authors: Nekorkin S.M.¹, Zvonkov B.N.¹, Baidus N.V.¹, Dikareva N.V.¹, Vikhrova O.V.¹, Afonenko A.A.², Ushakov D.V.²
Affiliations:
1. Physicotechnical Research Institute
2. Belarussian State University
Issue: Vol 51, No 1 (2017)
Pages: 73-77
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/199328
DOI: https://doi.org/10.1134/S1063782617010158
ID: 199328

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Abstract

The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.